Abstract:In this work, an ultra‐thin zinc nitride (Zn3N2) layer is introduced on the NiOx surface is chosen to prevent these redox reactions and interfacial issues using a simple solution process at low temperatures. The redox reaction and non‐radiative recombination at the interface of the perovskite and NiOx reduce chemically by using interface modifier Zn3N2 to reduce hydroxyl group and defects on the surface of NiOx. A thin layer of Zn3N2 at the NiOx/perovskite interface results in a high Ni3+/Ni2+ ratio and a significant work function (WF), which inhibits the redox reaction and provides a highly aligned energy level with perovskite crystal and rigorous trap‐passivation ability. Consequently, Zn3N2‐modified NiOx‐based PSCs achieve a champion PCE of 21.61%, over the NiOx‐based PSCs. After Zn3N2 modification, the PSC can improve stability under several conditions. For p‐i‐n perovskite solar cells (PSCs), nickel oxide (NiOx) hole transport layers (HTLs) are the preferred interfacial layer due to their low cost, high mobility, high transmittance, and stability. However, the redox reaction between the Ni≥3+ and hydroxyl groups in the NiOx and perovskite layer leads to oxidized CH3NH3+ and reacts with PbI in the perovskite, resulting in a large number of non‐radiative recombination sites. Among various transition metals, an ultra‐thin zinc nitride (Zn3N2) layer on the NiOx surface is chosen to prevent these redox reactions and interfacial issues using a simple solution process at low temperatures. The redox reaction and non‐radiative recombination at the interface of the perovskite and NiOx reduce chemically by using interface modifier Zn3N2 to reduce hydroxyl group and defects on the surface of NiOx. A thin layer of Zn3N2 at the NiOx/perovskite interface results in a high Ni3+/Ni2+ ratio and a significant work function (WF), which inhibits the redox reaction and provides a highly aligned energy level with perovskite crystal and rigorous trap‐passivation ability. Consequently, Zn3N2‐modified NiOx‐based PSCs achieve a champion PCE of 21.61%, over the NiOx‐based PSCs. After Zn3N2 modification, the PSC can improve stability under several conditions.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in perovskite solar cells (PSCs), the redox reactions occurring at the interface between the nickel oxide (NiOx) hole - transport layer and the perovskite layer lead to an increase in non - radiative recombination sites, thereby reducing the performance and stability of the cells. Specifically, nickel species in high oxidation states (such as Ni≥3+) and hydroxyl groups (-OH) on the NiOx surface react with methylammonium (CH3NH3+) in the perovskite layer to generate PbI, which not only increases the number of non - radiative recombination centers but also affects the chemical stability of the perovskite layer. To improve this problem, the author chose to deposit an ultrathin layer of zinc nitride (Zn3N2) on the NiOx surface, which was prepared by a simple solution method, to suppress these redox reactions and interface problems. The Zn3N2 layer can reduce the hydroxyl groups and defects on the NiOx surface, increase the ratio of Ni3+/Ni2+, and significantly increase the work function (WF), thereby achieving better energy - level alignment with the perovskite layer and strict trap - passivation ability. Eventually, the Zn3N2 - modified NiOx - based PSCs achieved a maximum photoelectric conversion efficiency (PCE) of 21.61% and showed better stability under various conditions. ### Main problem summary: 1. **Redox reactions**: Nickel species in high oxidation states (such as Ni≥3+) and hydroxyl groups (-OH) on the NiOx surface react with methylammonium (CH3NH3+) in the perovskite layer to generate PbI, resulting in an increase in non - radiative recombination sites. 2. **Non - radiative recombination**: These non - radiative recombination sites reduce the lifetime of charge carriers and degrade the performance of the cells. 3. **Interface stability**: The presence of nickel species in high oxidation states affects the chemical stability of the perovskite layer, leading to a decline in the long - term stability of the cells. ### Solutions: - **Introduction of the Zn3N2 layer**: Deposit an ultrathin layer of Zn3N2 on the NiOx surface, which was prepared by a simple solution method, to suppress redox reactions and interface problems. - **Reduction of hydroxyl groups and defects**: The Zn3N2 layer can reduce the hydroxyl groups and defects on the NiOx surface and increase the ratio of Ni3+/Ni2+. - **Increase in the work function**: The Zn3N2 layer significantly increases the work function (WF), achieving better energy - level alignment with the perovskite layer and strict trap - passivation ability. - **Performance improvement**: Eventually, the Zn3N2 - modified NiOx - based PSCs achieved a maximum photoelectric conversion efficiency (PCE) of 21.61% and showed better stability under various conditions. Through these methods, the author successfully solved the redox reaction problem at the interface between NiOx and the perovskite layer and significantly improved the performance and stability of PSCs.

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