Abstract:In this work, an ultra‐thin zinc nitride (Zn3N2) layer is introduced on the NiOx surface is chosen to prevent these redox reactions and interfacial issues using a simple solution process at low temperatures. The redox reaction and non‐radiative recombination at the interface of the perovskite and NiOx reduce chemically by using interface modifier Zn3N2 to reduce hydroxyl group and defects on the surface of NiOx. A thin layer of Zn3N2 at the NiOx/perovskite interface results in a high Ni3+/Ni2+ ratio and a significant work function (WF), which inhibits the redox reaction and provides a highly aligned energy level with perovskite crystal and rigorous trap‐passivation ability. Consequently, Zn3N2‐modified NiOx‐based PSCs achieve a champion PCE of 21.61%, over the NiOx‐based PSCs. After Zn3N2 modification, the PSC can improve stability under several conditions. For p‐i‐n perovskite solar cells (PSCs), nickel oxide (NiOx) hole transport layers (HTLs) are the preferred interfacial layer due to their low cost, high mobility, high transmittance, and stability. However, the redox reaction between the Ni≥3+ and hydroxyl groups in the NiOx and perovskite layer leads to oxidized CH3NH3+ and reacts with PbI in the perovskite, resulting in a large number of non‐radiative recombination sites. Among various transition metals, an ultra‐thin zinc nitride (Zn3N2) layer on the NiOx surface is chosen to prevent these redox reactions and interfacial issues using a simple solution process at low temperatures. The redox reaction and non‐radiative recombination at the interface of the perovskite and NiOx reduce chemically by using interface modifier Zn3N2 to reduce hydroxyl group and defects on the surface of NiOx. A thin layer of Zn3N2 at the NiOx/perovskite interface results in a high Ni3+/Ni2+ ratio and a significant work function (WF), which inhibits the redox reaction and provides a highly aligned energy level with perovskite crystal and rigorous trap‐passivation ability. Consequently, Zn3N2‐modified NiOx‐based PSCs achieve a champion PCE of 21.61%, over the NiOx‐based PSCs. After Zn3N2 modification, the PSC can improve stability under several conditions.

Revivification of nickel oxide-perovskite interfaces via nickel nitrate to boost performance in perovskite solar cells

Suppressing Redox Reactions at the Perovskite‐Nickel Oxide Interface with Zinc Nitride to Improve the Performance of Perovskite Solar Cells

Surface Sulfuration of NiO Boosts the Performance of Inverted Perovskite Solar Cells

Impact of nickel oxide/perovskite interfacial contact on the crystallization and photovoltaic performance of perovskite solar cells

Interfacial Engineering of Nickel Oxide-Perovskite Interface with Amino Acid Complexed NiO to Improve Perovskite Solar Cell Performance

Tuning Surface Oxidation States of Nickel Oxide for Efficient Inverted Perovskite Solar Cells

NiOx passivation in perovskite solar cells: from surface reactivity to device performance

Boosting interfacial contact for the NiO x -based inverted perovskite solar cells via D-A type semiconductor

Nickel oxide for inverted structure perovskite solar cells

Managing the Double-Edged Sword of Ni3+ in Sputter-Deposited NiOx by Interfacial Redox Reactions for Efficient Perovskite Solar Cells

Overcoming Ni 3+ ‐Induced Non‐Radiative Recombination at Perovskite‐Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells

Evaporated Nickel Oxide Films with Slow Annealing and Interface Modification for Perovskite Solar Cells

Linked Nickel Oxide/Perovskite Interface Passivation for High‐Performance Textured Monolithic Tandem Solar Cells

Quenching Detrimental Reactions and Boosting Hole Extraction via Multifunctional NiOx /Perovskite Interface Passivation for Efficient and Stable Inverted Solar Cells

Unraveling the Modification Effect at NiOx/perovskite interfaces for Efficient and Stable Inverted Perovskite Solar Cells

D-p-D molecular layer electronically bridges the NiO<i><sub>x</sub></i> hole transport layer and the perovskite layer towards high performance photovoltaics

Thermally-stable and highly-efficient bi-layered NiOx-based inverted planar perovskite solar cells by employing a p-type organic semiconductor

Interfacial Engineering of Nickel Oxide‐Perovskite Interface with Amino Acid Complexed NiO to Improve Perovskite Solar Cell Performance

Triple hole transporting and passivation layers for efficient NiOX-based wide-bandgap perovskite solar cells

The use of nickel oxide as a hole transport material in perovskite solar cell configuration: Achieving a high performance and stable device