Suppressing Oxidation at Perovskite‐NiOx Interface for Efficient and Stable Tin Perovskite Solar Cells
Bo Li,Chunlei Zhang,Danpeng Gao,Xianglang Sun,Shoufeng Zhang,Zhen Li,Jianqiu Gong,Shuai Li,Zonglong Zhu
DOI: https://doi.org/10.1002/adma.202309768
IF: 29.4
2023-11-18
Advanced Materials
Abstract:Inorganic nickel oxide (NiOx) is an ideal hole transport material (HTM) for the fabrication of high‐efficiency, stable, and large‐area perovskite photovoltaic devices because of its low cost, stability, and ease of solution processing; However, it delivers low power conversion efficiency (PCE) in tin perovskite solar cells (TPSCs) compared to other organic HTMs. Here, we identify the origin of hole transport barriers at the perovskite‐NiOx interface and develop a self‐assembled monolayer (SAM) interface modification, through introducing (4‐(7H‐dibenzo[c,g]carbazol‐7‐yl)ethyl)phosphonic acid (2PADBC) into the perovskite‐NiOx interface. The 2PADBC anchors undercoordinated Ni cations through phosphonic acid groups, suppressing the reaction of highly active Ni≥3+ defects with perovskites, while increasing the electron density and oxidation activation energy of Sn at the perovskite interface, reducing the interface non‐radiative recombination caused by tetravalent Sn defects. The devices deliver significantly increased open‐circuit voltage from 0.712 V to 0.825 V, boosting the PCE to 14.19% for the small‐area device and 12.05% for the large‐area (1 cm2) device. In addition, the 2PADBC modification enhances the operational stability of NiOx‐based TPSCs, maintaining more than 93% of their initial efficiency after 1000 hours. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology