Interface optimization and defects suppression via NaF introduction enable efficient flexible Sb 2 Se 3 thin-film solar cells

Mingdong Chen,Muhammad Ishaq,Donglou Ren,Hongli Ma,Zhenghua Su,Ping Fan,David Le Coq,Xianghua Zhang,Guangxing Liang,Shuo Chen
DOI: https://doi.org/10.1016/j.jechem.2023.10.059
IF: 13.1
2023-11-17
Journal of Energy Chemistry
Abstract:Sb 2 Se 3 with unique one-dimensional (1D) crystal structure exhibits exceptional deformation tolerance, demonstrating great application potential in flexible devices. However, the power conversion efficiency (PCE) of flexible Sb 2 Se 3 photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces. Herein, a high-quality Sb 2 Se 3 absorber layer with large crystal grains and benign [hk1] growth orientation can be first prepared on a Mo foil substrate. Then NaF intermediate layer is introduced between Mo and Sb 2 Se 3 , which can further optimize the growth of Sb 2 Se 3 thin film. Moreover, positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction. As a result, the champion substrate structured Mo-foil/Mo/NaF/Sb 2 Se 3 /CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage ( V OC ) of 0.492 V. This flexible Sb 2 Se 3 device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times, as well as superior weak light photo-response with derived efficiency of 12.60%. This work presents an effective strategy to enhance the flexible Sb 2 Se 3 device performance and expand its potential photovoltaic applications.
chemistry, physical,engineering, chemical, applied,energy & fuels
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