Abstract:Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.

Facing the key challenges of two-dimensional electronics

From lab to fab: path forward for 2D material electronics

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Gate Dielectrics Integration for Two‐Dimensional Electronics: Challenges, Advances and Outlook

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Electronics Based on Two-Dimensional Materials: Status and Outlook

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Dielectrics for 2-D Electronics: From Device to Circuit Applications

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

2D materials for future heterogeneous electronics

2D Semiconductors for Specific Electronic Applications: from Device to System

Chemical assembly of atomically thin transistors and circuits in a large scale

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials