Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs
Shouqiang Lai,Chaohsu Lai,Saijun Li,Guolong Chen,Xi Zheng,Tingwei Lu,Zongming Lin,Rongxing Wu,Yijun Lu,Hao-Chung Kuo,Zhong Chen,Tingzhu Wu
DOI: https://doi.org/10.1109/led.2023.3264983
IF: 4.8157
2023-01-01
IEEE Electron Device Letters
Abstract:In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.
engineering, electrical & electronic