Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Graphene Side Gate Engineering

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Gating graphene with a semiconductor

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Transport Properties of MoS2/V7(Bz)8 and Graphene/v7(bz)8 Vdw Junctions Tuned by Bias and Gate Voltages

Ambipolar graphene field effect transistors by local metal side gates

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Side-gate Modulation Effects on High-Quality BN-Graphene-BN Nanoribbon Capacitors

Systhesis and Devices of Graphene

Electric imaging and dynamics of photo-charged graphene edge

Graphene Field Effect Transistors with Ferroelectric Gating

ChemInform Abstract: Graphene Field‐Effect Transistors: Electrochemical Gating, Interfacial Capacitance, and Biosensing Applications

Atomic Scale Investigations of the Gate Controlled Tunneling Effect in Graphyne Nanoribbon

Probing Tunneling Spin Injection into Graphene via Bias Dependence

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor