Atomic Scale Investigations of the Gate Controlled Tunneling Effect in Graphyne Nanoribbon

Wen Yang,Lu-Hao Wang,Yang Geng,Qing-Qing Sun,Peng Zhou,Shi-Jing Ding,David Wei Zhang
DOI: https://doi.org/10.1063/1.4836876
IF: 2.877
2013-01-01
Journal of Applied Physics
Abstract:Configuration and transport properties of zigzag graphyne nanoribbon (n = 2) are investigated by means of the first-principles calculations and non-equilibrium Green's function in this work. We demonstrated the controllability of the graphyne's conductivity by gate bias, and the tunneling behavior induced by gate and drain voltages was investigated systemically. The characteristics of Id-Vd, Id-Vg, as well as the evolutions of current with electron temperature elevation were explored. The device exhibits a tunneling ratio around 103, and the state art of tunneling operations of the tunneling field effect transistor in this split-new material was achieved.
What problem does this paper attempt to address?