Gating graphene with a semiconductor

Randy Sterbentz,Bogyeom Kim,Anayeli Flores-Garibay,Kristine L. Haley,Nicholas T. Pereira,Kenji Watanabe,Takashi Taniguchi,Joshua O. Island

2024-10-09

Abstract:Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes, in low light conditions, and for specific gating properties. Here, we determine the effectiveness and limitations of a semiconducting gate in graphene and bilayer graphene devices. Using the semiconducting transition metal dichalcogenides molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2), we show that these semiconductors can be used to suitably gate the graphene devices for certain operating conditions. For singly gated devices, we find that the semiconducting gates provide gating characteristics comparable with metallic gates below liquid helium temperatures but include resistivity features resulting from gate voltage clamping of the MoS$_2$. A 1D potential model is developed that corroborates the clamping effect observed in the measurements. In doubly gated devices, we pin down the parameter range of effective operation and show that the semiconducting depletion regime results in clamping and hysteresis from defect state charge trapping. Our results provide a guide for the appropriate operating conditions for employing semiconducting gates and open the door to novel device architectures.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate and understand the effectiveness and limitations of using semiconductor materials (especially molybdenum disulfide \( \text{MoS}_2 \) and molybdenum diselenide \( \text{MoSe}_2 \)) as electrical gates for monolayer and bilayer graphene devices. Specifically, the paper explores the following points:

1. **Performance of semiconductor gates at low temperatures**: Investigate whether semiconductor gates can effectively regulate the electrical properties of graphene at liquid helium temperature and compare them with metal gates.

2. **Voltage clamping effect**: Analyze the voltage clamping phenomenon that occurs in semiconductor gates when the gate voltage exceeds a certain threshold and its impact on the transport properties of graphene.

3. **Parameter space in dual - gate configurations**: Determine the effective operating parameter ranges of semiconductor gates and control gates (such as few - layer graphene) in dual - gate configurations and explain their impact on the transport properties of bilayer graphene.

4. **Hysteresis phenomenon**: Explore the hysteresis phenomenon generated by semiconductor gates at different temperatures and gate voltage scanning directions and attribute it to the charge trapping of intrinsic defect states.

Through these studies, the paper aims to provide guidance for the use of semiconductor gates in graphene devices and pave the way for further development of new optoelectronic device architectures and high - sensitivity detectors.

### Main conclusions

- In a single - gate configuration, \( \text{MoS}_2 \) can effectively regulate the doping of monolayer and bilayer graphene at temperatures as low as 2.5 K.
- In a dual - gate configuration, the effective operating parameter range when \( \text{MoS}_2 \) is in the on - state has been determined, and the voltage clamping phenomenon in the off - state has been observed.
- The clamping effect has been verified based on a one - dimensional potential model, and the hysteresis phenomenon has been attributed to the charging and discharging behavior of intrinsic sulfur - vacancy defect states in \( \text{MoS}_2 \).

These results provide clear guidance for the rational selection and operation of semiconductor gates in graphene devices.