Abstract:Although graphene-based heterostructures exhibit excellent intrinsic properties for device scaling, fabricating low Schottky barrier is still a great challenge to the electrical transport behaviors of nanoelectronic devices. Exploring excellent materials for electronic devices are a research hotspot at present. Graphene not only exhibits excellent physical strength and specific surface area, but also presents high carrier mobility and thermal conductivity. Therefore, graphene has been developed in many fields such as energy, catalysis, etc. However, graphene is a special material with zero band gap, and its electrons and holes are easy to compound, which seriously hinders its development in the applications of electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides (TMDs) have the advantages of controllable band gap properties, which makes them have a good development in logic circuits and photodetectors. As one of TMD S , MoSe 2 possesses the advantages of narrower band gap, better electron hole separation and stronger oxidation resistance in the environment. Therefore, the design of graphene and MoSe 2 heterostructures is an ideal choice for a new generation of nanoelectronic devices. Here, we investigate systematically the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe 2(1– x ) O 2 x heterostructure for the first time by first-principles calculations incorporating semiempirical dispersion-correction scheme. The results indicate that graphene and MoSe 2 monolayer can form a stable van der Waals heterostructure with preserving their own intrinsic properties. In addition, an n-type schottky contact with a barrier height of 0.558 eV is obtained. Further, it is found that the type and the height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant at interface. By increasing the concentration of the O dopant inside the interface, the transition from an n-type Schottky contact to an Ohmic contact can be realized, and a low n-type Schottky barrier is gained with increasing the concentration of the O dopant outside the interface for highly efficient charge transfer. The barrier height of heterostructure decreases from 0.558 eV to 0.112 eV when the O dopant is doped on the outer interface. Finally, as a complement to previous results, it is confirmed that the redistribution of interfacial charges leads the Fermi level to shift, and thus determining the type and the height of Schottky barrier. This study may provide theoretical guidance for designing and manufacturing the MoSe 2 - based nano field effect transistors.

Gating graphene with a semiconductor

Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Graphene Side Gate Engineering

Regulation and Control of Schottky Barrier in Graphene/mose2 Heteojuinction by Asymmetric Oxygen Doping

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Full Control of Solid-State Electrolytes for Electrostatic Gating

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Visualizing electrostatic gating effects in two-dimensional heterostructures

Gate controllable spin transistor with semiconducting tunneling barrier

Quantum Capacitance Induced Non-Local Electrostatic Gating Effect in Graphene

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Graphene-Semiconductor Contact

Gate-controlled topological conducting channels in bilayer graphene

Anomalous Gate-tunable Capacitance in Graphene Moiré Heterostructures