Abstract:We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the [110] and $[1\overline{1}0]$ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the [110] $([1\overline{1}0])$ direction enhances the negative (positive) piezoelectric potential in the coupling region and lowers (raises) the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding $s$ orbitals to the two coupled $p$ orbitals in quantum dots coupled along the $[1\overline{1}0]$ direction and increases the splitting in the quantum dots coupled along the [110] direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the [110] direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the $[1\overline{1}0]$ direction.

Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Fine-structure Splitting of Exciton States in Semiconductor Quantum Dot Molecules

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Fine structure of bright and dark excitons in asymmetric droplet epitaxy GaAs/AlGaAs quantum dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Tunable Zero-Field Kondo Splitting in A Quantum Dot

Exciton localization and temperature stability in self‐organized InAs quantum dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots