Abstract:Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with parallel spins. Despite its name the dark exciton reveals weak luminescence that can be directly measured. The origins of this optical activity remain largely unexplored. In this work, using the atomistic tight-binding method combined with configuration-interaction approach, we demonstrate that atomic-scale randomness strongly affects oscillator strength of dark excitons confined in self-assembled cylindrical InGaAs quantum dots with no need for faceting or shape-elongation. We show that this process is mediated by two mechanisms: mixing dark and bright configurations by exchange interaction, and equally important appearance of non-vanishing optical transition matrix elements that otherwise correspond to nominally forbidden transitions in a non-alloyed case. The alloy randomness has essential impact on both bright and dark exciton states, including their energy, emission intensity, and polarization angle. We conclude that, due to the atomic-scale alloy randomness, finding dots with desired dark exciton properties may require exploration of a large ensemble, similarly to how dots with low bright exciton splitting are selected for entanglement generation.

Fine structure of bright and dark excitons in asymmetric droplet epitaxy GaAs/AlGaAs quantum dots

Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Fine-structure Splitting of Exciton States in Semiconductor Quantum Dot Molecules

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Eliminating the Fine Structure Splitting of Excitons in Self-Assembled InAs/GaAs Quantum Dots Via Combined Stresses

Conquer the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

Dark-bright excitons mixing in alloyed InGaAs self-assembled quantum dots

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Exciton Fine Structure in Axially Symmetric Quantum Dots and Rods of III-V and II-VI Semiconductors

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Peculiar spectra of dark and bright excitons in alloyed nanowire quantum dots

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Fine-structure splitting of exciton states in quantum dot molecules: symmetry and tunnel-coupling effects

Morphological engineering of aluminum droplet etched nanoholes for symmetric GaAs quantum dot epitaxy

Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots