Abstract:This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ μm for monolayer WSe2. A short‐channel monolayer WSe2 transistor with doped extensions reaches a maximum drain current of 154 μA μm−1 with a high on/off ratio of 107. Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contacts for monolayer WSe2 p‐FETs. Self‐limiting oxidation transforms a bilayer WSe2 into a hetero‐bilayer of a high‐work‐function WOxSey on a monolayer WSe2. Then, damage‐free nanolithography defines an undoped nano‐channel, preserving the high on‐current of WOxSey‐doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WOxSey interlayer under the contacts achieves record‐low contact resistances for monolayer WSe2 over a hole density range of 1012 to 1013 cm−2 (1.2 ± 0.3 kΩ μm at 1013 cm−2). The WOxSey‐doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □−1. Monolayer WSe2 p‐FETs with sub‐50 nm channel lengths reach a maximum drain current of 154 μA μm−1 with an on/off ratio of 107–108. These results define strategies for nanometer‐scale selective‐area doping in 2D FETs and other 2D architectures.

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors (Adv. Mater. 39/2024)

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Ambipolar and Robust WSe<sub>2</sub> Field-Effect Transistors Utilizing Self-Assembled Edge Oxides

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

One Dimensional Metallic Edges in Atomically Thin WSe 2 Induced by Air Exposure

Effect of MoSe2 Nanoribbons with NW30 Edge Reconstructions on the Electronic and Catalytic Properties by Strain Engineering

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Solution-processed, High-Performance Nanoribbon Transistors Based on Dithioperylene.

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask