Abstract:In this work, the gate controllability of WSe2 channel with varying thickness from monolayer to ten‐layer is investigated, by fabricating van der Waals contacted WSe2 devices. The findings demonstrate negligible hysteresis and excellent subthreshold swing observed when utilizing WSe2 channel thicknesses ≥ five‐layer. However, by reducing the WSe2 channel thickness below the trilayer, the subthreshold swing deviates from the thermal limit. The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted p‐FETs, varying the WSe2 channel thickness from monolayer to ten‐layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state‐of‐the‐art Si transistors, when utilizing WSe2 channel thicknesses ≥ five‐layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface‐contacted 2D transistors. Furthermore, all devices exhibit consistent p‐type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors (Adv. Mater. 39/2024)

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors

Ambipolar and Robust WSe<sub>2</sub> Field-Effect Transistors Utilizing Self-Assembled Edge Oxides

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Solution-processed, High-Performance Nanoribbon Transistors Based on Dithioperylene.

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Nanotube and Nanowire Transistors

Low Resistance Ohmic Contact to P-type Monolayer WSe2

High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

Synthesis and nano-field-effect transistors of p-type Zn0.3Cd0.7Te nanoribbons

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Mobility Enhancement and Hysteresis Phenomenon in WSe2 FETs