Abstract:Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: how to achieve large - scale, continuous, and self - aligned growth of two - dimensional transition metal dichalcogenide (TMDs) nanoribbons to meet the requirements of extreme device size reduction in advanced logic and storage devices. Specifically, the authors proposed a method based on step - directed epitaxy (LDE) and successfully prepared a dense array of single - layer, single - crystal MoS₂ nanoribbons on a β - gallium oxide (β - Ga₂O₃) (100) substrate. This method can not only achieve one - way growth of nanoribbons but also maintain their high spatial uniformity and excellent electrical properties, thus providing possibilities for future applications in electronic devices. ### Problems Solved in the Paper: 1. **Synthesis Challenges**: Two - dimensional transition metal dichalcogenide (such as MoS₂) nanoribbons have attracted much attention due to their potential applications in high - performance logic and storage devices, but they still face great challenges in synthesis at present. The main difficulty lies in how to simultaneously control the number of layers, single - crystallinity, self - alignment, and dimension to achieve high - quality nanoribbon mass production. 2. **Single - Crystallinity and Electrical Uniformity**: In order to achieve high - performance devices, single - crystallinity and electrical uniformity need to be achieved on nanoribbons. These characteristics are crucial for mass - producing field - effect transistor (FET) arrays and can provide a high degree of electrostatic control and low power consumption. 3. **Large - Scale Production**: Existing synthesis methods can usually only achieve high - quality nanoribbons in a small range and are difficult to meet the needs of large - scale production. Therefore, it is very necessary to develop a method that can achieve uniform, high - quality nanoribbon growth on a larger area. ### Solutions: - **Step - Directed Epitaxy (LDE)**: By using the step structure on a β - gallium oxide (β - Ga₂O₃) (100) substrate, one - way growth of MoS₂ nanoribbons is achieved. This method can accurately control the growth direction and position of nanoribbons, thereby obtaining a highly ordered nanoribbon array. - **Single - Crystallinity**: By controlling growth conditions such as temperature and precursor concentration, the single - crystallinity of nanoribbons is ensured. This makes the nanoribbons maintain consistent electrical properties throughout their length and avoids grain - boundary defects in polycrystalline structures. - **Reusable Substrate**: The β - Ga₂O₃ substrate after growth can be reused by mechanical exfoliation, reducing production costs and improving production efficiency. - **Versatility**: The LDE method is not only applicable to the growth of MoS₂ nanoribbons but can also be extended to other TMD materials, such as WSe₂, and can even be used to prepare lateral heterojunctions, such as n - MoS₂/p - WSe₂/n - MoS₂ structures, providing more possibilities for future electronic device design. In conclusion, this paper solves several key problems in the synthesis of two - dimensional TMD nanoribbons by proposing an innovative step - directed epitaxy method, laying the foundation for the development of high - performance electronic devices.

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