Abstract:Two-dimensional (2D) materials have attracted great interest due to their unique structures and exotic properties related to promising applications and fundamental research. Reducing the dimensionality of 2D materials into their 1D nanostructure is also highly desirable for the exploitation of novel properties and offers new research opportunities. In this work, we demonstrate a bottom-up synthesis of molybdenum disulfides (MoS2) nanoribbons on graphene substrate via chemical vapor deposition (CVD) by precisely tuning the growth parameters into a sulfur-enriched condition. MoS2 nanoribbons are mainly formed from the CVD grown MoS(2 )flakes along the armchair (AC) direction. Atomic resolution ADF-STEM imaging characterizations show an alternating presence of molybdenum and sulfur zigzag edge terminations at the edges of MoS2 nanoribbons. While at the apex of the nanoribbon, sulfur terminated zigzag edges become dominant. Taking these results together, we revealed the underlying growth mechanism of MoS2 nanoribbons. Electronic transport properties of the MoS(2 )nanoribbons were also measured by fabricating back-gate-effect transistors (FETs). The nanoribbon FETs present n-type behavior with a current on/off ratio higher than 10(4) at V-DS = 1 and a carrier mobility of 1.39 cm(2)V(-1) s(-1). This work offers a new route to synthesize 1D MoS2 nanoribbons, which has great potential in fabricating other 2D materials-derived 1D nanostructures.

Fabrication of MoSe 2 nanoribbons via an unusual morphological phase transition

Deriving MoS2 Nanoribbons from Their Flakes by Chemical Vapor Deposition.

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Quantum Confined Tomonaga-Luttinger Liquid in Mo6Se6 Nanowires Converted from an Epitaxial MoSe2 Monolayer

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Transition Metal Dichalcogenides Heterostructures Nanoribbons

Top–down fabrication of sub-nanometre semiconducting nanoribbons derived from molybdenum disulfide sheets

Contrasting Structural Reconstructions, Electronic Properties, and Magnetic Orderings along Different Edges of Zigzag Transition Metal Dichalcogenide Nanoribbons

Unveiling the Mechanism of Spontaneous Nanoscroll Formation from Janus Transition Metal Dichalcogenide Nanoribbons

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Controlled Growth of Atomically Thin MoSe 2 Films and Nanoribbons by Chemical Vapor Deposition

Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

Width-dependent Photoluminescence and Anisotropic Raman Spectroscopy from Monolayer MoS$_2$ Nanoribbons

Small Transition-Metal Dichalcogenide Nanostructures Down to Subnanometer by Two-Dimensional Material Origami

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires.