Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

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Electric field effect on electron gas spins in two-dimensional magnets with strong spin-orbit coupling

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Spin Polarization Induced by In-Plane Electric and Magnetic Fields in Two-Dimensional Heavy-Hole Systems

Screening of electrostatic potential in a composite fermion system

Effects of screening on the Hofstadter butterfly

Polarization of graphene in a strong magnetic field beyond the Dirac cone approximation

Magnification of the Spin Hall Effect in a Bilayer Electron Gas

Mesoscopic Spin-Hall Effect in 2D electron systems with smooth boundaries

Electron-spin Polarization in Magnetically Modulated Quantum Structures

Underscreened Kondo effect in quantum dots coupled to ferromagnetic leads

Spin-polarized Transport Through a Magnetic Heterostructure: Tunneling and Spin Filtering Effect

Non conventional screening of the Coulomb interaction in low dimensional and finite size system

Tunneling transport of two-dimensional spin-electrons through magnetic quantum structures

Spin Nernst effect and intrinsic magnetization in two-dimensional Dirac materials

Low-temperature spin Coulomb drag in a two-dimensional electron gas

Spin Polarization Induced By An External Electric Field In A Hybrid Magnetic-Electric Barrier

Intrinsic Dynamic Generation of Spin Polarization by Time-Varying Electric Field

Nonlinear screening and stopping power in two-dimensional electron gases

Conserved spin Hall conductance in two dimensional electron gas in a perpendicular magnetic field

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field