Abstract:The Bosch process was studied at a substrate temperature of -100°C and compared to etchings performed at room temperature, as in the general case. The tests were realized using an inductively coupled plasma (ICP) reactor by varying C 4 F 8 passivating gas flow injections both at +20°C and -100°C. It was observed that the Bosch process is effectively temperature dependent and that the necessary C 4 F 8 passivating gas flow can be reduced to obtain similar anisotropic profiles at -100°C compared to the ambient temperature process. For example, in one of the studied cases, a fluorocarbon injection of 8 sccm was sufficient to obtain an anisotropic etch rate of up to 4.4 μm/min at -100°C whereas the profile obtained at +20°C using the same parameters presents lateral etching defects with a reduced etch rate of 2.4 μm/min. At this point, the C 4 F 8 flow must be increased to 12 sccm (50% more) to retrieve an anisotropic profile with an etch rate of 4.0 μm/min. In the case of cryogenic Bosch (cryo-Bosch) processing, C 4 F 8 feed dosing has a greater influence on the passivation regime which affects the subsequent etching result but it can be easily refined through the optimization of process parameters. An in-situ ellipsometry study of the deposition rate of C 4 F 8 on both polycrystalline silicon (p-Si) and SiO 2 substrates was realized by varying the gas flow at -100°C and +20°C. This study shows that the deposited fluorocarbon material is approximately a hundred times thicker at cryogenic temperatures using the same process parameters. Scanning Electron Microscopy (SEM) observation of these samples are in adequation with the ellipsometry results. Cryo-Bosch etching also results in a slightly higher etch rate compared to room temperature processing when analyzing similar anisotropic profiles. Si:SiO 2 etching selectivity is significantly increased at -100°C although the aspect-ratio dependent etching (ARDE) phenomenon is more important.

Evaluation of Bosch processing and C 4 F 8 plasma deposition at cryogenic temperatures

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