Abstract:Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits. The interaction between nitrogen (N) and interstitial oxygen (Oi) atoms in the low temperature regime (300–650 °C), which leads to N–O complexes in the form of NOx (x = 1, 2, or 3), forms a series of shallow thermal donors (denoted as N–O STDs). Such N–O STDs are detrimental to the stability of electrical resistivity of NCZ silicon. In this work, we have experimentally investigated the elimination of N–O STDs in NCZ silicon by means of conventional furnace anneal (CFA) and rapid thermal anneal at elevated temperatures ranging from 900 to 1250 °C, aiming to explore the underlying mechanism. It is found that most of the N–O STDs formed in NCZ silicon can be eliminated by a very short period of anneal at the aforementioned temperatures, providing solid evidence for the viewpoint that the elimination of N–O STDs is ascribed to the decomposition of NOx complexes. Somewhat unexpectedly, the residual N–O STDs are much more after the 1250 °C/2 h CFA than after the 900 °C/2 h or 1000 °C/2 h counterpart, which is found to be due to the fact that more nitrogen pairs [(N2)s] are remaining after the 1250 °C/2 h CFA. It is proposed that most of the (N2) atoms are involved in the growth of grown-in oxide precipitates during the 900 or 1000 °C/2 h CFA. The first-principles calculations and molecular dynamics simulation indicate that the elimination of N–O STDs is essentially ascribed to the destruction of “NO ring” that is the core of NOx complexes. Furthermore, based on the experimental and theoretical results, we have made a thorough thermodynamic analysis to account for the details of elimination of N–O STDs as revealed in this work. It is believed that our experimental and theoretical studies have gained more insight into the N–O STDs in NCZ silicon.

Computational Chemistry Study on Initial Stages of Nitridation of Silicon Surfaces

Structural Formation and Mechanism in Combustion Synthesis of Nitrogen Ceramics (AIN, Si<sub>3</sub>N<sub>4</sub> and AIN-SiC)

High Temperature Nitridation Structures of the Si(111)-(7×7) Surface

Nitridation Of Si(100)-(2 X 1) Surface By Nh3: A Quantum Chemical Cluster Model Study

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS

Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending method

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Density Functional Theory Study of the Structural and Electronic Properties of Amorphous Silicon Nitrides: Si3N4−x:H

Direct-Nitridation of Silicon by Heat-Treating at High Temperature in Nitrogen Ambience

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Nitridation Of Silicon With Ammonia And Nitrogen