Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Diffusion-reaction mechanisms of nitriding species in SiO2

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Effect of Nitrogen Passivation on Interface Composition and Physical Stress in SiO2/SiC(4H) Structures

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Ab Initio Calculation of the Evolution of [SiN4‐nOn] Tetrahedron during β‐Si3N4(0001) Surface Oxidation

Effect of nitrogen introduced at the SiC/SiO$_2$ interface and SiC side on the electronic states by first-principles calculation

Oxidation behavior of amorphous silicon nitride nanoparticles

Stress Development and Impurity Segregation during Oxidation of the Si(100) Surface

Thermal-mechanical Coupling Effect on Initial Stage Oxidation of Si(100) Surface

Si Emission from the Sio2/Si Interface During the Growth of Sio2 in the Hfo2/Sio2/Si Structure

Influence of Nitrogen on Tunneling Barrier Heights and Effective Masses of Electrons and Holes at Lightly-Nitrided SiO2∕Si Interface

Initial stage oxidation on nano-trenched Si(1 0 0) surface