Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Diffusion-reaction mechanisms of nitriding species in SiO2

Adsorption-Oxidation Reaction Mechanism of NO on Na-ZSM-5 Molecular Sieves with a High Si/Al Ratio at Ambient Temperature

Structural Formation and Mechanism in Combustion Synthesis of Nitrogen Ceramics (AIN, Si<sub>3</sub>N<sub>4</sub> and AIN-SiC)

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Reactions of Silicon Atoms with NO. Experimental and Theoretical Characterization of Molecules Containing Si, N, and O

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Ab Initio Calculation of the Evolution of [SiN4‐nOn] Tetrahedron during β‐Si3N4(0001) Surface Oxidation

Promoting Effect of Silicon Particles on Gas-Diffusion-reaction System: In-situ Synthesis of AlN in Al-Si Materials

Kinetic study of the oxide-assisted catalyst-free synthesis of silicon nitride nanowires

Nucleation of silicon nanoparticles in amorphous silicon dioxide matrices

Nitridation Mechanism of Reaction Sintered Si3N4-SiC Composite

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

A Chemical Kinetic Study of the Oxidation of Silane by Nitrous Oxide, Nitric Oxide and Oxygen