Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Design and exploration of vertically stacked complementary tunneling field-effect transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

DC and AC characteristics of Si/SiGe based vertically stacked complementary-tunneling FETs

Complementary Tunneling-FETs (CTFET) in CMOS Technology

Stacked Complementary Field-Effect Transistors: Promises and Challenges

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

New structure transistors for advanced technology node CMOS ICs

A Combined N/PFET CFET-Based Design and Logic Technology Framework for CMOS Applications

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Complementary tunneling transistor for low power application

Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes

Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

A Complementary FET (CFET)-Based NAND Design to Reduce RC Delay

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor