Design and exploration of vertically stacked complementary tunneling field-effect transistors

Narasimhulu Thoti,Yiming Li
DOI: https://doi.org/10.35848/1882-0786/ad0ba7
IF: 2.819
2023-11-10
Applied Physics Express
Abstract:The purpose of this letter is to study the design and explore vertically stacked complementary tunneling field-effect transistors (CTFETs) using CFET technology for emerging technology nodes. As a prior work, the CTFET’s device-level simulations are implemented and deliberated in strict compliance with the experimental settings. This work comprises the study of physical and DC analyses by scaling the p- to n-CTFET separation (D pn ), being a significant factor in CFET/CTFET design for its process difficulty. By utilizing the 50% benefit in footprint, the work is further extended to CTFET static random access memory implementation and characterization with hold/read noise margin analysis.
Physics
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