Abstract:High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Performance Trade-offs in Complementary FET (CFET) Device Architectures for 3nm-node and Beyond

DC and AC characteristics of Si/SiGe based vertically stacked complementary-tunneling FETs

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Carbon Nanotube Materials for Future Integrated Circuit Applications

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective

Simulation Study of Lateral Ceft Logic Performance at 3 Nm Node

A Simulation Study of SiGe Shell Channel CFET for Sub-2-nm Technology Nodes

3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched $\textit{V}_{\text{T}}$ by Band Alignments of Individual Channels

Performance benchmarks for Si, III–V, TFET, and carbon nanotube FET - re-thinking the technology assessment methodology for complementary logic applications

A Complementary FET (CFET)-Based NAND Design to Reduce RC Delay

Performance Analysis of an Ultralow Power Circuit Using Single Halo CNTFETs

Complementary Tunneling-FETs (CTFET) in CMOS Technology

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

Modeling and Performance Comparison of 1-D and 2-D Devices Including Parasitic Gate Capacitance and Screening Effect

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes