Abstract:Moore's law, along with the International Roadmap for Devices and Systems, continues to guide the scaling of devices below 10 nm. The challenges posed by such small-dimensioned devices form the basis of the present work. A junctionless MOSFET with a triple-metal gate structure is proposed as an alternative to conventional single-gate bulk MOSFETs for future CMOS technology. The present work investigated the direct current and analog/radio frequency characteristics including the drain current ), transconductance , transconductance generation factor (TGF), cut-off frequency , frequency–transconductance product (FTP), transit time and the total resistance of the source region, drain region, and channel for triple-metal (TM) inversion-mode (IM) and junctionless (JL) cylindrical gate-all-around (CGAA) silicon nanowire (SiNW) MOSFETs with 3-nm gate length using the Silvaco ATLAS 3D TCAD tool. The non-equilibrium Green's function and the self-consistent solution of the Schrödinger and Poisson equations were considered. The channel was taken to be lightly doped in the case of the IM TM CGAA SiNW device. The effect of the TM gate work function engineering for a SiNW channel with a diameter of 3 nm and gate oxide thickness of 0.8 nm was investigated with respect to , , TGF, , , FTP, and , and a comparative study between the IM TM and JL TM CGAA SiNW devices was carried out with respect to these parameters. For the JL device, optimization of the doping concentration was performed to obtain the same (i) I ON current and (ii) threshold voltage ( V TH ) as the IM device. An 8.61- and 5.72-fold reduction in I OFF was seen for the same I ON and V TH for the JL versus the IM device. It was found that the TM gate variation led to a reduction in drain-induced barrier lowering (DIBL) in the IM and JL devices. The JL SiNW showed much lower DIBL of ~39.49 mV/V, a near-ideal subthreshold slope (SS) of ~60 mV/dec, and higher current ratio of ~2.98 × 10 12 . which is much better than the values reported in the literature for CGAA devices. Also, the JL SiNW device was found to perform better than the IM SiNW device in terms of SS, DIBL, , TGF, f T , , FTP, and .

Exploring the Performance of 3-D Nanosheet FET in Inversion and Junctionless Modes: Device and Circuit-Level Analysis and Comparison

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Device to circuit level implementation of JL-NSFET for DC/analog/RF applications at sub-5nm technology node: Design optimization and temperature analysis

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

Exploration of Negative Capacitance in Multi-Gate Junctionless Transistor

Simulation Study of Lateral Ceft Logic Performance at 3 Nm Node

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Mixed-Mode Analysis of Different Mode Silicon Nanowire Transistors-Based Inverter

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node

A Comprehensive Analysis of Nanosheet Field-Effect Transistor: Recent Advances and Comparative Study

Oppositely-Doped Core-Shell Junctionless Nanowire FET: Design and Investigation

NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

Negative Capacitance Junctionless FinFET for Low Power Applications: An Innovative Approach