Abstract:2D field-effect transistors (FETs) fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for the silicon-based CMOS. However, the lack of advancement in p-type contact is also a key factor hindering TMD-based CMOS applications. The less investigated path towards improving electrical characteristics based on contact geometries with low contact resistance (RC) has also been established. Moreover, finding contact metals to reduce the RC is indeed one of the significant challenges in achieving the above goal. Our research provides the first comparative analysis of the three contact configurations for a WSe2 monolayer with different noble metals (Rh, Ru, and Pd) by employing ab initio density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. From the perspective of the contact topologies, the RC and minimum subthreshold slope (SSMIN) of all the conventional edge contacts are outperformed by the novel non-van der Waals (vdW) sandwich contacts. These non-vdW sandwich contacts reveal that their RC values are below 50 Ω∙μm, attributed to the narrow Schottky barrier widths (SBWs) and low Schottky barrier heights (SBHs). Not only are the RC values dramatically reduced by such novel contacts, but the SSMIN values are lower than 68 mV/dec. The new proposal offers the lowest RC and SSMIN, irrespective of the contact metals. Further considering the metal leads, the WSe2/Rh FETs based on the non-vdW sandwich contacts show a meager RC value of 33 Ω∙μm and an exceptional SSMIN of 63 mV/dec. The two calculated results present the smallest-ever values reported in our study, indicating that the non-vdW sandwich contacts with Rh leads can attain the best-case scenario. In contrast, the symmetric convex edge contacts with Pd leads cause the worst-case degradation, yielding an RC value of 213 Ω∙μm and an SSMIN value of 95 mV/dec. While all the WSe2/Ru FETs exhibit medium performances, the minimal shift in the transfer curves is interestingly advantageous to the circuit operation. Conclusively, the low-RC performances and the desirable SSMIN values are a combination of the contact geometries and metal leads. This innovation, achieved through noble metal leads in conjunction with the novel contact configurations, paves the way for a TMD-based CMOS with ultra-low RC and rapid switching speeds.

High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Low Resistance Contact to P-Type Monolayer WSe2

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Impact of Rh, Ru, and Pd Leads and Contact Topologies on Performance of WSe2 FETs: A First Comparative Ab Initio Study

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS 2 /WSe 2 van der Waals Heterostructures

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

High-Performance Bilayer WSe2 Pfet with Record Ids = 425 Μa/μm and Gm = 100 at Μs/μm Vds = -1 V by Direct Growth and Fabrication on SiO2 Substrate