Abstract:Thickness has been proved to have significant influence on the physical properties of two-dimensional (2D) materials and their corresponding devices. Understanding the effect of the thickness of 2D insertions on the contact properties of metal-monolayer MoS interfaces (viz. metal-mMoS interfaces) is vital to designing high performance mMoS devices. In this work, the electronic structures, Schottky barriers, contact resistance, and tunneling barriers of scandium-mMoS (Sc-mMoS) interfaces with BN and graphene insertions have been comparatively studied by density functional theory. No Schottky barriers are found at Sc-mMoS interfaces with monolayer 2D insertions. Although the contact resistance and charge injection efficiency of Sc-mMoS interfaces with monolayer insertions deteriorate relatively to those of the Sc-mMoS interface, they are still sufficient to realize high-performance mMoS-based devices. Note that, upon increasing the number of layers of 2D insertions, these contact properties are further deteriorated with the increasing number of layers of insertions. Moreover, additional significant Schottky barriers are introduced into Sc-mMoS interfaces with multilayer BN; the nature Dirac points of graphene insertions are opened, suggesting low performances of Sc-mMoS interfaces with multilayer BN and graphene insertions. These variations can be understood on the basis of the orbital hybridization and charge redistribution between the Sc slab and mMoS layer. In addition, these characteristics are expected to occur in other metal-mMoS interfaces with two-dimensional material insertions. Overall, monolayer rather than multilayer two-dimensional insertions can be used to improve the transport properties of mMoS-based devices.

Interface effects of Schottky devices built from MoS2 and high work function metals

Influence of MoS2-metal Interface on Charge Injection: a Comparison Between Various Metal Contacts.

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

P-type Schottky-barrier-free Contact to MoS_{2} Via Layer-Number-assisted Interface Engineering

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Controlling the Electronic and Geometric Structures of 2D Insertions to Realize High Performance Metal/insertion-Mos2 Sandwich Interfaces.

The Modulation of Schottky Barriers of Metal-Mos2 Contacts Via Bn-Mos2 Heterostructures

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Designing high performance metal-mMoS 2 interfaces by two-dimensional insertions with suitable thickness.

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Impacts of interface contaminations on the MoS2 field effect transistors and a modified fabrication process to pursue a better interface quality

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Defect Induced Gap States in Monolayer Mos2 Control the Schottky Barriers of Pt-Mmos(2) Interfaces

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy Via Engineering MoS2-Metal Van Der Waals Contact

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance