Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Landau quantization of topological surface states in Bi2Se3.

Landau Quantization of Topological Surface States Inbi2se3

Imaging the Two-Component Nature of Dirac–Landau Levels in the Topological Surface State of Bi2Se3

Landau levels in a topological insulator

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Landau Quantization and the Thickness Limit of Topological Insulator Thin Films Ofsb2te3

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Probing the Coulomb Gap in the Topological Insulator BiSbTeSe2 Via Quantum Capacitance

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy

Observation of Quantum Hall effect in an ultra-thin (Bi<sub>0.53</sub>Sb<sub>0.47</sub>)<sub>2</sub>Te<sub>3</sub> film

Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3.

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Quantum Landau Spin Hall Insulator