Quantum Landau Spin Hall Insulator

Tetsuro Habe,Yasuhiro Asano

DOI: https://doi.org/10.48550/arXiv.1309.6023

2013-09-24

Abstract:We study theoretically the two-dimensional topological electric state in a single band semiconductor with strong spin-orbit interactions under harmonic scalar electrostatic potentials. The electronic states described by the spin Landau levels are insulating in the bulk and host gapless edge states in the presence of time-reversal symmetry. Such topological states show the properties of the quantized electric conductivity and the quantized spin Hall conductivity characterized by the spin Chern number $\mathbb{Z}$. The quantization of the two conductivities are robust under various perturbations such as the potential disorder, the Zeeman field, and the spin-orbit scatterings. Existing semiconductor technologies would realize the topological states discussed in the present paper.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to realize the Quantum Spin Hall Insulator (QSHI) in single - band semiconductors. Specifically, the author studied the two - dimensional topological electrical states of single - band semiconductors under harmonic scalar electrostatic potentials in the presence of strong spin - orbit interactions. These electronic states are described by spin Landau levels and are insulating in the bulk material, but in the presence of time - reversal symmetry, there are gapless edge states at the edges. This topological state exhibits quantized conductivity and quantized spin - Hall conductivity characterized by the spin Chern number \(Z\). The main goal of the paper is to propose an artificial quantum spin - Hall insulator that can be realized under the existing semiconductor technology conditions and has the following four novel features:

1. **Spin Landau States**: The Quantum Spin Hall State (QSHS) is described by Landau levels and can be characterized by the spin Chern number \(Z\) of any integer. Therefore, the author refers to it as the "Quantum Landau Spin Hall State" (QLSHS). At the edge of the spin - Hall insulator, \(Z\) carries spin - polarized currents for the gapless Kramers edge channels.

2. **Quantized Spin - Hall Conductivity**: This is a direct result of the spin Chern number.

3. **Stability under Symmetry - Breaking Perturbations**: The spin - polarized edge channels remain stable under symmetry - breaking perturbations such as Rashba spin - orbit interactions and magnetic fields and are fully protected in semi - infinite systems.

4. **Experimental Feasibility**: Existing semiconductor technologies can realize junctions between quantum spin - Hall insulators and other materials. In addition, the Chern number can be adjusted by the gate voltage.

The paper also discusses how to realize the Quantum Landau Spin Hall State by adjusting the external electrostatic potential \(u_0\) and estimates the strength of the electrostatic potential required to realize this state. Through theoretical analysis and calculations, the author shows that under specific conditions, the realization of this artificial quantum spin - Hall insulator is feasible and its edge states remain stable under various perturbations. This provides a new way to further explore the rich physical properties of topological materials experimentally.