Abstract:Cobalt oxide (CoO and Co3O4) films with good crystallinity are successfully synthesized by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) and H2O/O3. Both films exhibit smooth surface, good uniformity, and low resistivity. Density functional theory calculations (enthalpy change) demonstrate that the film growth is greatly affected by the oxidability of co‐reactants during the deposition process.Cobalt oxides (CoxOy) have shown great potential for applications in catalysts, sensors, and energy storage fields, and their performance remarkably depends on their oxidation states. Herein, CoxOy films with precisely controlled composition are first introduced by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) as Co precursor and H2O/O3 as oxidants. The results show that the ALD processes using both oxidants exhibit typical self‐limiting characteristic, where cubic‐CoO films, with growth rate of 0.045 nm per cycle, are obtained at 150–200 °C using H2O oxidant, while cubic‐Co3O4 films, with growth rate of 0.05 nm per cycle, can be deposited at 200–225 °C using O3 oxidant. Both CoO and Co3O4 films show dense, smooth microstructure, and good crystallinity with typical columnar crystal feature, where the Co3O4 film shows smaller columnar size because the O3 promotes rapid nucleation with relatively higher density of nucleation sites. The thermodynamic growth mechanism of ALD process is established via density functional theory calculations, which demonstrates that the exothermic reaction path of O3 is more energetically than that of H2O. Both films possess relatively low resistivity of ≈10−1 Ω cm−1 with p‐type semiconductor behavior, which shows promising application potentials of these films.

Nucleation, Hydroxylation, and Crystallization Effects in ALD SrO

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

Effect of Various Oxidants on Reaction Mechanisms, Self‐Limiting Natures and Structural Characteristics of Al2O3 Films Grown by Atomic Layer Deposition

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Nucleation Effects in the Atomic Layer Deposition of Nickel–Aluminum Oxide Thin Films

Atomic Layer Deposition of Co x O y Films: Oxidants versus Composition

Cation Nonstoichiometry and Its Impact on Nucleation, Structure and Defect Formation in Complex Oxide Heteroepitaxy : LaCrO3 on SrTiO3(001)

Growth Behavior Of Hafnium Oxide Film By Atomic Layer Deposition And Its Modulation

Preferential growth of ZnO thin films by the atomic layer deposition technique

In situ infrared spectroscopy during La2O3 ALD using La( i PrCp)3 and H2O

Enhancement of the structural, optical, and optoelectrical properties of nebulizer spray pyrolyzed SnO 2 thin films by strontium doping

Atomic Layer Deposition of In2O3:H from InCp and H2O/O2: Microstructure and Isotope Labeling Studies

Sequential pulsed laser deposition of homoepitaxial SrTiO$_3$ thin films

Crystallization Behaviors of Ultrathin Al-doped HfO 2 Amorphous Films Grown by Atomic Layer Deposition