Abstract:In‐situ X‐ray photoelectron spectroscopy reveals a complex growth mechanism of atomic layer deposited CeOx films, deviating from an ideal layer‐by‐layer growth. The initial stages show higher growth per cycle, Ce3+ states at the interface, and more carbon residues compared to the steady growth stage. The film substrate interaction at the interface induces this complex behavior. Thermal atomic layer deposition (ALD) of cerium oxide using commercial Ce(thd)4 precursor and O3 on SiO2 substrates is studied employing in‐situ X‐ray photoelectron spectroscopy (XPS). The system presents a complex growth behavior determined by the change in the reaction mechanism when the precursor interacts with the substrate or the cerium oxide surface. During the first growth stage, non‐ALD side reactions promoted by the substrate affect the growth per cycle, the amount of carbon residue on the surface, and the oxidation degree of cerium oxide. On the contrary, the second growth stage is characterized by a constant growth per cycle in good agreement with the literature, low carbon residues, and almost fully oxidized cerium oxide films. This distinction between two growth regimes is not unique to the CeOx/SiO2 system but can be generalized to other metal oxide substrates. Furthermore, the film growth deviates from the ideal layer‐by‐layer mode, forming micrometric inhomogeneous and defective flakes that eventually coalesce for deposit thicknesses above 10 nm. The ALD‐cerium oxide films present less order and a higher density of defects than films grown by physical vapor deposition techniques, likely affecting their reactivity in oxidizing and reducing conditions.

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In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Molecular Dynamics Simulations of Lanthanum Oxide Surfaces

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy

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Infrared study of the quasi-two-dimensional electron system at the interface between SrTiO$_{3}$ and crystalline or amorphous LaAlO$_3$

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X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces