A 220–260-GHz Silicon-Micromachined Waveguide MEMS Crossover Switch

Armin Karimi,Umer Shah,Suxian Yu,Joachim Oberhammer
DOI: https://doi.org/10.1109/tmtt.2024.3373870
IF: 4.3
2024-01-01
IEEE Transactions on Microwave Theory and Techniques
Abstract:This article presents a novel subterahertz (sub-THz) crossover waveguide switch concept operating in the 220–260-GHz frequency band. The crossover switching circuit is implemented by two hybrid couplers and two single-pole-single-throw (SPST) switching mechanisms, utilizing microelectromechanically reconfigurable switching surfaces. The silicon-micromachined crossover switch prototype is very compact, with a total footprint of 5.6 $\times$ 5 $\times$ 1.2 mm, including four standard WR-3.4 waveguide ports and the waveguide routing to these ports. The measured insertion loss (IL) is 0.9–1.4 dB in the crossover state and 0.8–1.3 dB in the straight state from 220 to 260 GHz, and the isolation (ISO) is better than 29.3 and 29 dB, respectively, for these states. The measured return loss (RL) is better than 14 dB in the crossover state and better than 13.6 dB in the straight state. Besides, the measured input-to-input ISO is better than 13.7 and 34 dB in the crossover and straight states, respectively. The measurement results are in excellent agreement with the simulation data. Moreover, the signal paths are fully symmetric for all input-to-output signal paths, making the crossover switching circuit suitable for redundancy applications.
engineering, electrical & electronic
What problem does this paper attempt to address?