Bipolar Nb3Cl8 Field Effect Transistors

Yixiang Lu,Kai Zhao,Tongyao Zhang,Baojuan Dong

DOI: https://doi.org/10.3390/magnetochemistry10060043

2024-06-15

Magnetochemistry

Abstract:Field effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as the thickness increases from 4.21 nm to 16.7 nm. Moreover, we find that the tunability of few-layered Nb3Cl8 FETs' electrical transport properties can be significantly augmented through the use of an ionic liquid gate (or electrical double layer, EDL). This enhancement leads to a substantial increase in the on–off ratio by approximately a factor of 102, with the transfer curve modulated into a bipolar fashion. The emergence of such bipolar tunable characteristics in Nb3Cl8 FETs serves to enrich the electronic properties within the transition metal halide family, positioning Nb3Cl8 as a promising candidate for diverse applications spanning transistors, logic circuits, neuromorphic computing and spintronics.

chemistry, physical, inorganic & nuclear,materials science, multidisciplinary

What problem does this paper attempt to address?

This paper mainly discusses the electrical properties of field-effect transistors (FETs) based on two-dimensional van der Waals metal halide (TMH) Nb3Cl8. The study found that thin Nb3Cl8 layers exhibit typical N-type semiconductor behavior controlled by silicon gate, and the electrical signals are enhanced with increasing thickness. Furthermore, by using ionic liquid gating (electrolyte double-layer, EDL) control, the tunability of the device's electrical transport properties is significantly improved, resulting in a approximately two orders of magnitude increase in the on/off ratio and the adjustment of the transfer curve to a bipolar mode. This bipolar tunability enriches the electronic properties of the transition metal halide family and makes Nb3Cl8 a promising candidate material for future applications in transistors, logic circuits, neuromorphic computing, spintronics, and other fields. The paper also introduces the method of preparing high-quality Nb3Cl8 nanosheets by mechanical exfoliation and constructing FETs, as well as the experimental process of controlling with solid-state silicon and ionic liquid gates. The research results show that the control of ionic liquid gating can effectively improve the device performance and enhance its application potential in electronic devices.

Bipolar Nb3Cl8 Field Effect Transistors

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