Abstract:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim wileyonlinelibrary.com (1 of 5) 1600539 for FETs. Indeed, the first hybrid perovskite utilized in FET is (C6H5C2H4NH3)2SnI4 with 2D layered structure. The solution-processed FET device exhibited field-effect mobility up to 0.62 cm2 V−1 s−1 and Ion/Ioff ratio above 104.[34] Further improvement was demonstrated through the melt processed deposition technique. The saturation and linear mobilities of 2.6 and 1.7 cm2 V−1 s−1 were achieved.[35] In addition to relatively high mobility, (C6H5C2H4NH3)2SnI4 shows intensive light absorption in visible range and we envision that it should be a candidate for high-performance photodetectors. Here we report the fabrication of the 2D layered hybrid perovskite (C6H5C2H4NH3)2SnI4 based phototransistor by a one-step solution method. The hole mobility of the channel layer reached the range of 0.76–1.2 cm2 V−1 s−1. When exposed to weak visible illumination, the phototransistor showed an astonishing photosensitive performance with high responsivity and high light to dark current ratio both. This photo response performance of this device is one of the best among the perovskitebased photodetectors ever reported. A schematic device structure of button gate, top contact phototransistor (channel length 50 μm, width 1 mm) is illustrated in Figure 1a. The channel layer, (C6H5C2H4NH3)2SnI4 perovskite film, with thickness of about 130 nm (Figure S1, Supporting Information), was fabricated by a one-step spincoating process on a heavily n-doped Si wafer with a 300 nm SiO2 surface layer. In the X-ray diffraction (XRD) pattern (Figure 1b), regular peaks at 5.2°, 10.7°, 16.1°, 21.6°, 27.2°, 32.8°, and 38.5° can be ascribed to the diffraction from lattice plane of (0 0 l) (l = 2, 4, 6, 8, 10, 12, 14), indicating the formation of (C6H5C2H4NH3)2SnI4 perovskite with layered structure. The alternating organic–inorganic layers stack perpendicular to the substrate surface. Top view scanning electron microscope (SEM) image (Figure 1c) showed that the perovskite film was smooth and pinhole free. The layer edges on the film surface confirmed the layered structure. UV–vis absorption spectrum of the film (Figure 1d) presented wide absorption band with edge located at 631 nm. The optical band gap calculated from the onset of the absorption spectrum is 1.96 eV. The highest occupied molecular orbital (HOMO) level of the (C6H5C2H4 NH3)2SnI4 perovskite, −5.11 eV, was obtained from the ultraviolet-photoelectron-spectrometer (UPS) spectra (Figure S2, Supporting Information). The lowest unoccupied molecular orbital (LUMO) level, −3.15 eV, was calculated from the HOMO level and optical band gap. The transmittance spectrum shows that most part of the light below 610 nm was absorbed by the (C6H5C2H4NH3)2SnI4 film. The visible light detection characteristics can be expected. The FET characters without lumination (in dark state) were first tested. Both transfer and output curves (Figure 2) showed an excellent gate modulation. Fifteen devices were measured, and saturation regime hole Visible-Light Ultrasensitive Solution-Prepared Layered Organic–Inorganic Hybrid Perovskite Field-Effect Transistor

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