Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Writam Banerjee,Alireza Kashir,Stanislav Kamba
DOI: https://doi.org/10.1002/smll.202107575
IF: 13.3
2022-05-07
Small
Abstract:Hafnium oxide (HfO2), a long‐standing warrior in the semiconductor battlefield, is the all‐purpose oxide. Here, the atomic view of HfO2 with microscopic properties, followed by the macroscopic electrical features, which further continue to explore the applications of HfO2 in resistive random access memory, and ferroelectric memory, and finally prospects and challenges are reviewed. Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?