Abstract:As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the grain size of intermetallic compounds (IMCs) has been observed during the reflow process. This phenomenon results in an increased thickness of the IMC layer, accompanied by a proportional increase in the volume of the IMC layer within the joint. The brittle nature of IMC renders it susceptible to excessive growth in small-sized joints, which has the potential to negatively impact the reliability of the welded joint. It is therefore of the utmost importance to regulate the formation and growth of IMCs. The following paper presents the electrodeposition of a Ni-W layer on a Cu substrate, forming a barrier layer. Subsequently, the barrier properties between the Sn/Cu reactive couples were subjected to a comprehensive and systematic investigation. The study indicates that the Ni-W layer has the capacity to impede the diffusion of Sn atoms into Cu. Furthermore, the Ni-W layer is a viable diffusion barrier at the Sn/Cu interface. The "bright layer" Ni2WSn4 can be observed in all Ni-W coatings during the soldering reflow process, and its growth was almost linear. The structure of the Ni-W layer is such that it reduces the barrier properties that would otherwise be inherent to it. This is due to the "bright layer" Ni2WSn4 that covers the original Ni-W barrier layer. At a temperature of 300 °C for a duration of 600 s, the Ni-W barrier layer loses its blocking function. Once the "bright layer" Ni2WSn4 has completely covered the original Ni-W barrier layer, the diffusion activation energy for Sn diffusion into the Cu substrate side will be significantly reduced, particularly in areas where the distortion energy is concentrated due to electroplating tension. Both the "bright layer" Ni2WSn4 and Sn will grow rapidly, with the formation of Cu-Sn intermetallic compounds (IMCs). At temperatures of 250 °C, the growth of Ni3Sn4-based IMCs is controlled by grain boundaries. Conversely, the growth of the Ni2WSn4 layer (consumption of Ni-W layer) is influenced by a combination of grain boundary diffusion and bulk diffusion. At temperatures of 275 °C and 300 °C, the growth of Ni3Sn4-based IMCs and the Ni2WSn4 layer (consumption of Ni-W layer) are both controlled by grain boundaries. The findings of this study can inform the theoretical design of solder joints with barrier layers as well as the selection of Ni-W diffusion barrier layers for use in different soldering processes. This can, in turn, enhance the reliability of microelectronic devices, offering significant theoretical and practical value.

Comparison of Diffusion Barrier Properties of Ni–Fe and Ni–Fe–W Layer at the Cu/Sn Interface

Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction

The Interfacial Reaction between Amorphous Ni-W-P Coating and Sn-58Bi Solder

Interfacial reaction between Sn-Ag solder and electroless Ni-Fe-P diffusion barriers with different internal microstructure

Influence of Crystalline Structure on Diffusion Barrier Property of Electroless Ni–Fe–P Coatings in Zn–Al Solder Interconnects

A Cu/Ni/Cu/Sn1.8Ag Microbump Structure for Void-free Interface under Long Time High-Temperature Storage

First-Principles Study of Cu Addition on Mechanical Properties of Ni3Sn4-Based Intermetallic Compounds

Reliability Assessment of Wafer Level Packages with Novel Feni under Bump Metallization

Crystallinity of Co-P coating on microstructure and mechanical properties of Co-Sn intermetallic compounds at Sn-Ag/Co-P/Cu Interface

Theoretical and experimental investigations on mechanical properties of (Fe,Ni)Sn2 intermetallic compounds formed in SnAgCu/Fe-Ni solder joints

Electrodeposited Ni-W coatings as the effective reaction barrier at Ga-21.5In-10Sn/Cu interfaces

The feasibility study of replacing the traditional amorphous Ni-P with an amorphous Ni-Cu-P layer

Effects of High-Temperature Treatment on the Reaction Between Sn-3%Ag-0.5%Cu Solder and Sputtered Ni-V Film on Ferrite Substrate

Solid/solid Interfacial Reactions Between Sn–0.7 Wt% Cu and Ni–7 Wt% V

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

Sn–0.7wt.%Cu/Ni Interfacial Reactions at 250°C

Improved Cu/Sn interface reliability using double-layer stacked nano-twinned Cu

Metallurgical aspects and joint properties of Cu-Ni-In-Cu fine-pitch interconnects for 3D integration

Fabrication of Potential NiMoP Diffusion Barrier/seed Layers for Cu Interconnects Via Electroless Deposition

Effect of Ni(P) Layer Thickness on Interface Reaction and Reliability of Ultrathin ENEPIG Surface Finish

Nucleation and growth of Cu6Sn5 during the aging process of Cu/Sn interface in electronic packaging-by in-situ TEM