Abstract:In recent years, materials with metal-to-insulator phase transitions have attracted great attention due to their property variations before and after the transition. As nearly all good thermoelectric materials are small band gap semiconductors, a metal-insulator transition makes a profound difference in thermoelectric performance. Revealing the microscopic reasons for these variations is critical to understanding the structure-property relation in these materials. MgAgSb is an important thermoelectric material around room temperature, due to its high zT value and intrinsic low lattice thermal conductivity in the semiconducting alpha-phase. However, the thermoelectric properties of mid-temperature beta-phase MgAgSb significantly deteriorate because the beta-phase has no band gap. In this work, we reveal that the Ag atomic rearrangement between the two phases is the major reason responsible for the metal-insulator transition and deterioration of thermoelectric properties. In MgAgSb, there are strong interactions between Mg and Sb, as well as Ag and Sb, leading to bands of mixed character around the Fermi Level. In alpha-MgAgSb, the Mg-Sb bands in the conduction band minimum separate well with the bands around the valence band maximum, and form a finite band gap. Due to the Ag rearrangement and the formation of a quasi two-dimensional structure of beta-MgAgSb, the interactions among Mg-Ag-Sb atoms form multiple bands crossing the Fermi level, and realize the "two-dimensional metallization ". In addition, the structural variations in the beta-phase results in higher phonon velocities and removal of additional low-frequency optical phonons as only shown in the alpha-phase, both of which leading to the relatively high kappa L of the beta-phase. Our work provides new perspectives for the performance research and application of materials with metal-insulator phase transitions.

The realization of insulator-metal transition in a p-type metastable ZnSb by dual-phase nanostructure

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

High thermoelectric performance in ZnSb-SnTe pseudo-binary materials

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Tailoring structure by the Zn-induced tetrahedron to enable high-stability and low-transition-energy of Sb 2 Te phase-change films

High thermoelectric performance in p-type InSb with all-scale hierarchical architectures

Electric-Field Driven Insulator-Metal Transition And Tunable Magnetoresistance In Zno Thin Film

An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Charge Mediated Reversible Metal-Insulator Transition in Monolayer Mote2 and Wxmo1-Xte2 Alloy

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

The Metal-Insulator Transition in ZrTe5 Induced by Temperature

Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Ag rearrangement induced metal-insulator phase transition in thermoelectric MgAgSb

Nanostructured Sb2Te3 films composited with Bi2S3 for p–n conduction type conversion

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach

Realizing High‐Ranged Out‐of‐Plane ZTs in N‐Type SnSe Crystals through Promoting Continuous Phase Transition

Topological phase transition in Sb-doped Mg 3 Bi 2 monocrystalline thin films