Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

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Ultrahigh Sensitive Phototransistor Based on MoSe2/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

GeSn/SiGeSn Photonic Devices for Mid-Infrared Applications: Experiments and Calculations

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

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Fabrication of Ge Nano-Dot Heterojunction Phototransistors for Improved Light Detection at 1.55Μm

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$