Abstract:Since its first synthesis in 2003 [1], the ternary alloy semiconductor SiGeSn has seen an increasing interest due to its unique properties in the field of Group-IV semiconductors [2–6]. SiGeSn not only allows the decoupling of its bandgap and lattice-constant by what it is predestined for the epitaxy of strain-reduced heterostructures on the Si platform. Furthermore, SiGeSn becomes a direct bandgap semiconductor at high Sn concentrations. Considering these properties, SiGeSn is an attractive material system for optoelectronic applications. An exemplary heterojunction optoelectronic device is the single confinement heterostructure laser diode, the still missing key component for the monolithic integration of the optical on-chip communication on Si. However, one of the greatest challenges faced by many Group-IV researchers is the epitaxy of SiGeSn bulk alloys with high crystal quality. The temperature induced segregation of Sn results in interstitial Sn atoms and subsequently in acceptor-like defect states, as it was already reported for GeSn [7]. In this work, we show the molecular beam epitaxy (MBE) of SiGeSn structures under Hydrogen ambient. First of all, we determined the concentration of the acceptor-like defect states of undoped SiGeSn N A,defect on the basis of capacitance-voltage (C-V) measurements of SiGeSn pin diodes. Furthermore, we investigated Hydrogen-assisted epitaxy as an approach for the reduction of the acceptor-like defect states. All epitaxy experiments were performed in a 6" MBE system, where Si, Ge and Sn are used as matrix materials and B and Sb as dopants respectively. In particular, we investigated the influence of molecular (H 2 ) as well as atomic (H) Hydrogen on the epitaxy process and therefore the quality of the grown structures. For this purpose, the MBE system was upgraded with a Hydrogen atom beam source for the generation of an atomic Hydrogen flux. Since the Sn segregation is affected mostly by the substrate temperature, this critical growth parameter is measured in-situ using an infrared pyrometer, which allows the observation of the dynamic processes on the sample surface [8] and the precise control of the substrate temperature at T Sub = 200 °C during the SiGeSn epitaxy. All SiGeSn structures are based on Ge virtual substrates (Ge-VS) on Si(001) [9], followed by a 400 nm thick additional Ge buffer layer. In order to fulfil lattice matching of SiGeSn on Ge, a constant ratio of Si and Sn of Si/Sn = 3.67 was kept for all structures. The Sn concentration was varied in the range of 5 % > N A,defect ), the slope m of the C -2 -V characteristics is proportional to N A,defect . In this manner, we determined N A,defect for several SiGeSn pin diodes in dependence of the alloy composition. The results, as shown in Fig. 1f, show an acceptor-like defect concentration between 10 17 cm -3 < N A,defect < 10 18 cm -3 , which i -Abstract Truncated-

The Characteristics of GeSn P-N Junction Devices Fabricated by Molecular Beam Epitaxy

Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn

Growth of silicon based germanium tin alloys

Growth And Infrared/Terahertz Range Photoelectric Properties Of Gesn/P-Si Substrate Photodiode

Si–Ge–Sn alloys: From growth to applications

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

GeSn p-n-p Heterophototransistor on Si

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Enhancing Device Performance with High Electron Mobility GeSn Materials

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Growth of single crystalline GeSn alloy epilayer on Gd 2 O 3 /Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Hybrid Molecular Beam Epitaxy of Ge-based Oxides

SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Gesn Alloys: From Optical to Electrical Pumped Lasers

Lattice matched GeSn/InAlAs heterostructure: Role of Sn in energy band alignment, atomic layer diffusion and photoluminescence