Abstract:Since its first synthesis in 2003 [1], the ternary alloy semiconductor SiGeSn has seen an increasing interest due to its unique properties in the field of Group-IV semiconductors [2–6]. SiGeSn not only allows the decoupling of its bandgap and lattice-constant by what it is predestined for the epitaxy of strain-reduced heterostructures on the Si platform. Furthermore, SiGeSn becomes a direct bandgap semiconductor at high Sn concentrations. Considering these properties, SiGeSn is an attractive material system for optoelectronic applications. An exemplary heterojunction optoelectronic device is the single confinement heterostructure laser diode, the still missing key component for the monolithic integration of the optical on-chip communication on Si. However, one of the greatest challenges faced by many Group-IV researchers is the epitaxy of SiGeSn bulk alloys with high crystal quality. The temperature induced segregation of Sn results in interstitial Sn atoms and subsequently in acceptor-like defect states, as it was already reported for GeSn [7]. In this work, we show the molecular beam epitaxy (MBE) of SiGeSn structures under Hydrogen ambient. First of all, we determined the concentration of the acceptor-like defect states of undoped SiGeSn N A,defect on the basis of capacitance-voltage (C-V) measurements of SiGeSn pin diodes. Furthermore, we investigated Hydrogen-assisted epitaxy as an approach for the reduction of the acceptor-like defect states. All epitaxy experiments were performed in a 6" MBE system, where Si, Ge and Sn are used as matrix materials and B and Sb as dopants respectively. In particular, we investigated the influence of molecular (H 2 ) as well as atomic (H) Hydrogen on the epitaxy process and therefore the quality of the grown structures. For this purpose, the MBE system was upgraded with a Hydrogen atom beam source for the generation of an atomic Hydrogen flux. Since the Sn segregation is affected mostly by the substrate temperature, this critical growth parameter is measured in-situ using an infrared pyrometer, which allows the observation of the dynamic processes on the sample surface [8] and the precise control of the substrate temperature at T Sub = 200 °C during the SiGeSn epitaxy. All SiGeSn structures are based on Ge virtual substrates (Ge-VS) on Si(001) [9], followed by a 400 nm thick additional Ge buffer layer. In order to fulfil lattice matching of SiGeSn on Ge, a constant ratio of Si and Sn of Si/Sn = 3.67 was kept for all structures. The Sn concentration was varied in the range of 5 % > N A,defect ), the slope m of the C -2 -V characteristics is proportional to N A,defect . In this manner, we determined N A,defect for several SiGeSn pin diodes in dependence of the alloy composition. The results, as shown in Fig. 1f, show an acceptor-like defect concentration between 10 17 cm -3 < N A,defect < 10 18 cm -3 , which i -Abstract Truncated-

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn

Highly Strained Ge1-xSnx Alloy Films with High Sn Compositions Grown by MBE

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

Growth of silicon based germanium tin alloys

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Si–Ge–Sn alloys: From growth to applications

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices