Abstract:In recent years, Micro-light-emitting diode (Micro-LED) has attracted much attention in the display field, because it provides the possibility of high pixel density, etc. The implementation of high pixel density is accompanied by the reduction of size, during which the performance degradation caused by sidewall defects gradually increases. At the same time, the increase in power density and difficulty in heat dissipation caused by high pixel density can also lead to poor thermal management, resulting in an increase in junction temperature, thus affecting the display effect. In this paper, we prepared seven different sizes of Micro-LED and studied the influence of size and temperature effects on the optoelectronic properties. Smaller-sized Micro-LED could withstand higher current densities because it was not affected by the current crowding effect. However, it tends to have a larger series resistance (R-S) and a lower external quantum efficiency (EQE) due to sidewall defects created during etching. The luminance of the 100 mu m and 7 mu m Micro-LED was 340000 cd/m(2) (at 83 A/cm(2)) and 32000 cd/m(2) (at 773 A/cm(2)), respectively. The peak EQE of 100 mu m Micro-LED was 16.87 %. On this basis, the temperature-dependence of the optoelectronic properties of 10 mu m and 50 mu m Micro-LED were studied. The larger the size of Micro-LED, the better the operational stability it exhibited. From the room temperature (RT) rose to 100 degree celsius, the EQE of the 10 mu m and 50 mu m Micro-LED decreased by 16 % and 13.1 %, respectively. These experimental results provide important data for the design and preparation of Micro-LED of different sizes and for exploring the operational stability at high temperatures.

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