Influence of Sulfurization Time on Sb2S3 Synthesis Using a New Graphite Box Design

Sheyda Uc-Canché,Eduardo Camacho-Espinosa,Ricardo Mis-Fernández,Mariely Loeza-Poot,Francisco Ceh-Cih,Juan Luis Peña

DOI: https://doi.org/10.3390/ma17071656

IF: 3.4

2024-04-05

Materials

Abstract:In recent years, antimony sulfide (Sb2S3) has been investigated as a photovoltaic absorber material due to its suitable absorber coefficient, direct band gap, extinction coefficient, earth-abundant, and environmentally friendly constituents. Therefore, this work proposes Sb2S3 film preparation by an effective two-step process using a new graphite box design and sulfur distribution, which has a high repeatability level and can be scalable. First, an Sb thin film was deposited using the RF-Sputtering technique, and after that, the samples were annealed with elemental sulfur into a graphite box, varying the sulfurization time from 20 to 50 min. The structural, optical, morphological, and chemical characteristics of the resulting thin films were analyzed. Results reveal the method's effectivity and the best properties were obtained for the sample sulfurized during 40 min. This Sb2S3 thin film presents an orthorhombic crystalline structure, elongated grains, a band gap of 1.69 eV, a crystallite size of 15.25 Å, and a nearly stoichiometric composition. In addition, the formation of a p-n junction was achieved by depositing silver back contact on the Glass/FTO/CdS/Sb2S3 structure. Therefore, the graphite box design has been demonstrated to be functional to obtain Sb2S3 by a two-step process.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of sulfidation time on the synthesis of Sb₂S₃ thin films by using a new graphite box design. Specifically, the paper focuses on how to improve the structural, optical, morphological and chemical properties of Sb₂S₃ thin films by optimizing the time parameters in the sulfidation process, in order to obtain an ideal material suitable for photovoltaic applications. In addition, the paper also explores how to form p - n junctions by this method, providing a basis for the preparation of solar cells.

The paper mentions that the traditional methods for preparing Sb₂S₃ thin films have some shortcomings, such as the formation of non - stoichiometric thin films leading to problems such as defects (sulfur vacancies). To solve these problems, the authors propose a two - step process. First, a layer of metal Sb thin film is deposited, and then sulfidation treatment is carried out in a graphite box. By changing the sulfidation time, the influence on the final film properties is studied, and the optimal sulfidation time is determined. The experimental results show that within a sulfidation time of 40 minutes, Sb₂S₃ thin films with ideal properties can be obtained, including an orthorhombic crystal structure, long - strip - shaped grains, a band gap of 1.69 eV, a grain size of 15.25 Å and a composition close to the stoichiometric ratio. These properties make this material an ideal candidate for the photovoltaic absorption layer.