Abstract:This study explores a new, cost‐effective, compact, and non‐destructive method for characterizing non‐uniform strain fields and material properties in semiconductors using the bulk photovoltage effect. Combining Raman spectroscopy, finite element method calculations, and lateral photovoltage scanning experiments on the benchmark structures of silicon nitride stripes deposited on a germanium substrate, this approach provides insights into strain and transport properties' analysis. Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.

Measurement and modeling of strain waves in germanium induced by ultrafast laser pulses

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Laser Induced Periodic Surface Structure Formation in Germanium by Strong Field Mid IR Laser Solid Interaction at Oblique Incidence.

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Femtosecond Laser Processing of Germanium: Anab Initiomolecular Dynamics Study

Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

Investigation of lasing in highly strained germanium at the crossover to direct band gap

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Measurements of the Carrier Dynamics and Terahertz Response of Oriented Germanium Nanowires using Optical-Pump Terahertz-Probe Spectroscopy

Optical and microstructural studies of femtosecond laser treated amorphous germanium thin coatings

High Spatial Frequency Laser Induced Periodic Surface Structure Formation in Germanium by Mid-Ir Femtosecond Pulses

Strain mapping in amorphous germanium thin films with scanning reflectance anisotropy microscopy

Dislocation Analysis of Germanium Wafers under 1080 Nm Laser Ablation.

A numerical study of picosecond laser micro-grooving of single crystalline germanium: Mechanism discussion and process simulation

Laser–material interaction and grooving performance in ultrafast laser ablation of crystalline germanium under ambient conditions

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

Velocimetry of GHz elastic surface waves in quartz and fused silica based on full-field imaging of pump-probe reflectometry