Abstract:This article reviews advanced polishing, grinding and finishing processes for challenging manufacturing applications. The topics covered are machining of advanced alloys; machining of wafers; strengths of dies after machining; grinding and polishing for wafer level packages; hybrid finishing processes; magnetorheological finishing; cooling and lubrication; dental, implant and clinical applications; grinding of metal matrix composites; machining of other brittle materials; fixed abrasive polishing; vibratory finishing; and truing, kinematics and wear of tools. Findings include that a novel three-layered ice-bonded abrasive tool was proposed to polish Ti-6Al-4V. Wafer strengths and corresponding finishing processes are challenging issues for manufacturing of microelectronics devices. The processes could significantly enhance or reduce package strengths. Burrs were minimized to zero after grinding of honeycomb using a novel wheel with small asperities on its grinding surface. Polishing of silicon substrates using a fixed abrasive pad largely shortened the polishing time. Traditionally, grinding required flood coolant, which caused various environmental problems. Recently, more companies demand reduced coolant to respond to environmental requirements. Therefore, minimum quantity of lubrication has become a novel research trend for the benefits of the environment, health and costs. Innovative approaches led to good cooling, smooth surfaces ground with low roughness and low grinding forces.3PB: 3-point bending; 4PB: 4-point bending; ANN: artificial neural network; BEMRF: ball end magnetorheological finishing; CMP: chemical mechanical polishing; DTM: difficult-to-machine; EDM: electric discharge machining; EMC: epoxy mold compound; FOWLP: fan-out wafer level package; IC: integrated circuit; LCD: liquid crystal display; MAF: magnetic abrasive finishing; MRF: magnetorheological finishing; MRR: material removal rate; MMC: metal matrix composite; MQCF: minimum quantity cutting fluid; MQL: minimum quantity of lubrication; MWCNT: multi-walled carbon nanotube; RSM: response surface methodology; SQL: small-quantity cooling and lubrication; SSD: sub-surface damage; 3D: three-dimensional; TSV: through-silicon via; UV: ultraviolet; WLCSP: wafer level chip scale package; WC: tungsten carbide

Optimal design of wafer back-grinding feeding profile considering subsurface damage and productivity

Simultaneous double side grinding of silicon wafers: A further investigation into grinding marks pattern

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Subsurface Damage and Bending Strength Analysis for Ultra-Thin and Flexible Silicon Chips

Optimization of grinding process for hard and brittle materials based on damage evolution mechanism

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

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Surface Roughness Model of Ground 4H-SiC Considering Ductile and Brittle Removal

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Advanced polishing, grinding and finishing processes for various manufacturing applications: a review

Multi-Objective Optimization of Surface Integrity in the Grind-Hardening Process

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Prediction and Measurement for Grinding Force in Wafer Self-Rotational Grinding

Modeling of Material Removal Rate for the Fixed-Abrasive Double-Sided Planetary Grinding of a Sapphire Substrate

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Undeformed Chip Width Non-Uniformity Modeling and Surface Roughness Prediction in Wafer Self-Rotational Grinding Process

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