Abstract:The ultra-precision grinding technology based on a workpiece self-rotational principle is extensively used for silicon wafer thinning in the chip post-processing. Nevertheless, owing to the random nature of diamond grains and the unique machining manner of rotating components, accurate prediction and real-time monitoring of grinding forces remain a significant challenge in wafer self-rotational grinding (WSRG) process. This work establishes an improved theoretical model and builds a novel in-situ measurement system to analyze and detect the grinding force. Firstly, the motion trajectory and contact condition of diamond grains are explored. The grain–workpiece interactions are divided into rubbing, plowing, cutting and brittle stages. Secondly, the grinding force prediction model is proposed, which considers the combined effects of grain wear, grain randomness characteristics, brittle-to-ductile transition, elastic rebound, strain rate and grinding marks. Moreover, piezoelectric force sensors are employed to build the in-situ measurement system. The developed system is proven to simultaneously measure grinding forces online with continuous and stable output in the x, y and z directions. The impacts caused by feed rate, wheel speed and wafer speed are further revealed. Experimental results are consistent well with predicted ones, demonstrating a high prediction accuracy of the proposed grinding force model. Finally, a new index, namely the processing factor, is introduced to calculate the subsurface damage depth and residual stress for various machining parameters. This work not only enhances the understanding of predicting and measuring grinding force, but also provides a new method to evaluate the subsurface defects in brittle material grinding.

Simultaneous double side grinding of silicon wafers: A further investigation into grinding marks pattern

An Overview of Current Research on Simultaneous Double Side Grinding of Silicon Wafers

Prediction and Verification Analysis of Grinding Force in the Single Grain Grinding Process of Fused Silica Glass

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

An Investigation of the Surface Waviness Features of Ground Surface in Parallel Grinding Process

Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process

The material removal and surface generation mechanism in ultra-precision grinding of silicon wafers

Modeling and Simulation of Grinding Surface Topography Considering Wheel Vibration

Superimpose mechanism of surface generation process in grinding of monocrystalline silicon using molecular dynamics simulation

Undeformed Chip Width Non-Uniformity Modeling and Surface Roughness Prediction in Wafer Self-Rotational Grinding Process

Nano-grinding Process of Single-Crystal Silicon Using Molecular Dynamics Simulation: Nano-grinding Parameters Effect

Prediction and Measurement for Grinding Force in Wafer Self-Rotational Grinding

A grinding force model in two-dimensional ultrasonic-assisted grinding of silicon carbide

Surface figure control in fine rotation grinding process of thick silicon mirror

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Three-dimensional modelling and simulation of vibration marks on surface generation in ultra-precision grinding

Multi-Step Two-Dimensional Ultrasonic-Assisted Grinding of Silicon Carbide: An Experimental Study on Surface Topography and Roughness

Study on the Surface Generation Mechanism During Ultra-Precision Parallel Grinding of SiC Ceramics

Numerical Analysis in Double-Sided Polishing: Mechanism Exploration of Edge Roll-Off

Modeling on the Flatness of Silicon Wafers Ground by the Grind-polishing Wheel

Numerical simulation of single abrasive grain grinding of silicon carbide surface