Thermal Transport of AlN/Graphene/3C-SiC Typical Heterostructures with Different Crystallinities of Graphene

Bing Yang,Cheng Peng,Mingru Song,Yangpu Tang,Yongling Wu,Xiaohu Wu,Hongyu Zheng

DOI: https://doi.org/10.1021/acsami.2c17661

2022-12-22

Abstract:ACS Appl Mater Interfaces . 2022 Dec 20. doi: 10.1021/acsami.2c17661. Online ahead of print. NO

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Structure-mediated thermal transport of monolayer graphene allotropes nanoribbons

haifei zhan,yingyan zhang,john bell,yiuwing mai,yuantong gu

DOI: https://doi.org/10.1016/j.carbon.2014.05.045

IF: 10.9

2014-01-01

Carbon

Abstract:We report the study of the thermal transport management of monolayer graphene allotrope nanoribbons (size ∼20×4nm2) by the modulation of their structures via molecular dynamics simulations. The thermal conductivity of graphyne (GY)-like geometries is observed to decrease monotonously with increasing number of acetylenic linkages between adjacent hexagons. Strikingly, by incorporating those GY or GY-like structures, the thermal performance of graphene can be effectively engineered. The resulting hetero-junctions possess a sharp local temperature jump at the interface, and show a much lower effective thermal conductivity due to the enhanced phonon–phonon scattering. More importantly, by controlling the percentage, type and distribution pattern of the GY or GY-like structures, the hetero-junctions are found to exhibit tunable thermal transport properties (including the effective thermal conductivity, interfacial thermal resistance and rectification). This study provides a heuristic guideline to manipulate the thermal properties of 2D carbon networks, ideal for application in thermoelectric devices with strongly suppressed thermal conductivity.
Thermal transport mechanism of AlN/SiG/3C-SiC typical heterostructures

Bing Yang,Junyi Wang,Zhihao Yang,Zhiduo Xin,Nana Zhang,Hongyu Zheng,Xiaohu Wu

DOI: https://doi.org/10.1016/j.mtphys.2022.100948

IF: 11.021

2022-12-09

Materials Today Physics

Abstract:Understanding the heat transfer mechanism of typical structures in high-power chips is essential for chip design with better engineered heat transfer performance. Here, the interfacial thermal resistance (ITR) and in-plane thermal conductivity (TC) of AlN/Si-doped graphene/3C-SiC (AlN/SiG/3C-SiC) heterostructures are systematically studied by molecular dynamics simulation. Silicon doping can reduce the ITR by as much as 31.72% with a concentration of 8%, which is verified furthermore by energy transport and thermal relaxation time. Multiple analyses indicate that Si doping results in the enhancement of strong interaction between 3C-SiC and SiG, the decline of weak interaction between AlN and other two materials due to the accumulation of wrinkles in SiG, and finally promotes the phonon transmission of 0-18 THz at interfaces owing to the dominance of strong interaction. In addition, the in-plane TC is reduced by 11.24% when the Si-doped concentration is 8%. By analyzing the stress field, SiG and two-layer atoms on the interface side of 3C-SiC are mainly responsible for thermal resistance, and SiG leads to the exponential dependence between TC and doping concentration. The results also show that the ITR is sensitive to the random doping positions, while the TC is not. We believe the results in this work will have important guiding significance for enhancing the thermal transport performance of high-power chips.

materials science, multidisciplinary,physics, applied
Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Xin Wu,Penghua Ying,Chunlei Li,Qiang Han

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2022.123643

2023-01-01

Abstract:Two-dimensional (2D) lateral superlattices, a typical artificial nano-phononic crystal, have stimulated widespread interests and potential application prospects in terms of their physically interesting features. Herein, we have found wave-particle crossover of phonon transport in the graphene (Gr)/2D polyani-line (C3N) lateral superlattices, which is an indication of a transition in the phonon transport mecha-nism from the incoherent to coherent regime. Due to the high structural similarity of C3N to Gr, the thermal conductivity of the Gr/C3N lateral superlattice can achieve an ultra-wide modulation range of about 500 similar to 1100 W m -1 K -1, which is far beyond that of other superlattices. The analysis shows that an increase of the interface density will on the one hand weaken the thermal conductivity by increas-ing phonon-interface scattering, and on the other hand increase it by lowering the phonon transport barriers and allowing more long-wavelength phonons to participate in the transport. This determines the parabolic trend of thermal conductivity containing the minimum, and also reflects the dual effects of hetero-interfaces on phonon thermal transport. In addition, phonon calculations show that the above variation in thermal conductivity is entirely attributable to differences in the phonon mean free path for different interface densities and is not related to their group velocity.(c) 2022 Elsevier Ltd. All rights reserved.
Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Xiao-Qing Miao,Lin-Juan Huang,Wen-Sheng Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2011.6213743

2011-01-01

Abstract:Numerical study is performed for an effective suppression of temperature rise in AlGaN/GaN high electron mobility transistors (HEMT) using our developed algorithm based on finite element method. Such a HEMT can be fabricated on SiC or other substrates with graphene inserted between the AlGaN and the GaN layers. The effects of both geometrical and physical parameters of the structure on the maximum temperature rise at the top surface of AlGaN layer are examined and compared. It is shown that as the semiconducting graphene has extreme large thermal conductivity in comparison with other semiconductor counterparts, it can be integrated into AlGaN/GaN HEMTs and other SOI active devices as an effective heat removal layer. Under such circumstances, their electrical performance and reliability can be enhanced greatly. Therefore, we are able to say that graphene has great potential in challenging thermal managements of some active devices operating at high temperature, which must be used for the development of some miniaturized system in package (SiP).
Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Song Jie,Xu Fu-Jun,Huang Cheng-Cheng,Lin Fang,Wang Xin-Qiang,Yang Zhi-Jian,Shen Bo

DOI: https://doi.org/10.1088/1674-1056/20/5/057305

2011-01-01

Chinese Physics B

Abstract:The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.
Electronic and thermoelectric properties of atomically thin C3Si3/C and C3Ge3/C superlattices.

Muhammad Ali,Xiaodong Pi,Yong Liu,Deren Yang

DOI: https://doi.org/10.1088/1361-6528/aa9ebb

IF: 3.5

2018-01-01

Nanotechnology

Abstract:The nanostructuring of graphene into superlattices offers the possibility of tuning both the electronic and thermal properties of graphene. Using classical and quantum mechanical calculations, we have investigated the electronic and thermoelectric properties of the atomically thin superlattice of C3Si3/C (C3Ge3/C) formed by the incorporation of Si (Ge) atoms into graphene. The bandgap and phonon thermal conductivity of C3Si3/C (C3Ge3/C) are 0.54 (0.51) eV and 15.48 (12.64) Wm(-1) K-1, respectively, while the carrier mobility of C3Si3/C (C3Ge3/C) is 1.285 x 10(5) (1.311 x 10(5)) cm(2) V-1 s(-1) at 300 K. The thermoelectric figure of merit for C3Si3/C (C3Ge3/C) can be optimized via the tuning of carrier concentration to obtain the prominent ZT value of 1.95 (2.72).
Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Z. L. Miao,N. Tang,F. J. Xu,L. B. Cen,K. Han,J. Song,C. C. Huang,T. J. Yu,Z. J. Yang,X. Q. Wang,G. Y. Zhang,B. Shen,K. Wei,J. Huang,X. Y. Liu

DOI: https://doi.org/10.1063/1.3525989

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Magnetotransport properties of the two-dimensional electron gas (2DEG) in lattice-matched In0.18Al0.82N/AlN/GaN heterostructures have been studied at low temperatures and high magnetic fields. The double subband occupancy of the 2DEG in the triangular quantum well at the heterointerface is observed. The 2DEG density is determined to be 2.09×1013 cm−2 and the energy separation between the first and the second subbands is 191 meV. Both of them are significantly higher than those in AlxGa1−xN/AlN/GaN heterostructures owing to the stronger spontaneous polarization effect. The evident difference of the quantum scattering times in the two subbands of the 2DEG indicates that the interface roughness scattering plays an important role in the transport properties of the 2DEG in InxAl1−xN/AlN/GaN heterostructures.
Thermal transport at 6H-SiC/graphene buffer layer/GaN heterogeneous interface

Bing Yang,Haiying Yang,Tianbo Li,Jianming Yang,Ping Yang

DOI: https://doi.org/10.1016/j.apsusc.2020.147828

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:We investigate the epitaxial growth of graphene on SiC and thermal transport at 6H-SiC/graphene buffer layer/GaN heterogeneous interface. Under Tersoff-Erhart-Albe potential (TEA) and environment-dependent interatomic potential (EDIP), graphene buffer layer (GBL) is epitaxially grown by simulated annealing method, and simulations show that TEA potential is superior to EDIP potential by evaluation of nucleation temperature, radial distribution function, average atomic binding energy, atomic structure and bond length. Further, by thermal relaxation method, single-vacancy defects in graphene can reduce interface thermal resistance (ITR) at 6H-SiC/GBL/GaN heterogeneous interface with maximum reduction of 9.6%, meaning that ITR can be reduced by defect engineering. In addition, with the increase of nucleation areas, especially the bonding of different nucleation zones, ITR also has a highest decline of 17.9%, and energy is easier to pass through the interface, illustrating the importance of graphene integrity for interfacial heat transfer. At last, the increase in temperature (300 K to 1100 K) results in a maximum 19.6% decrease in ITR, indicating that ITR is sensitive to temperature. The selection of potential and the analysis of the heat transfer of the three-materials heterogeneous interface contribute to thermal design of graphene-based semiconductor devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

J. Song,F. J. Xu,Z. L. Miao,Y. Wang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1063/1.3246866

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:The microstructure and electrical properties of Al0.25Ga0.75N/GaN heterostructures with various AlN thicknesses have been investigated. An optimum thickness of AlN interlayer can remarkably improve the microstructure of Al0.25Ga0.75N barrier with the most uniform strain and the lowest density of threading dislocations, leading to the highest Hall mobility of the two-dimensional electron gas in the heterostructures. Transmission electron microscopy images show that the AlN interlayer with an optimum thickness can make the threading dislocations bend and be annihilated with each other in the vicinity of the heterointerface due to the larger mismatch strain between AlN interlayer and GaN. We believe that such behavior reduces the local strain and improves the uniformity of the strain in the AlxGa1−xN barrier, and thus depresses the scattering induced by the fluctuations of the piezoelectric interface charge owing to the nonuniformity of piezoelectric polarization field in AlxGa1−xN/GaN heterostructures.
Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner

Huibin Sun,Yunlei Jiang,Renjie Hua,Runhua Huang,Lei Shi,Yuan Dong,Suxia Liang,Jing Ni,Chi Zhang,Ruoyu Dong,Yingru Song

DOI: https://doi.org/10.3390/nano12224057

IF: 5.3

2022-11-17

Nanomaterials

Abstract:Thermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other excellent physical properties. The similarities in crystal structure and chemistry between graphene and boron nitride provide the possibility of constructing graphene/BN heterostructures bearing unique functions. In this paper, we investigated the interfacial thermal transport properties of graphene/BN nanosheets via non-equilibrium molecular dynamics (NEMD) simulations. We observed a significant thermal rectification behavior of these graphene/BN nanosheets, and the rectification ratio increased with the system length increases up to 117%. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes in two directions at the interface. In addition, we explored the underlying mechanism of the length dependence of the thermal transport properties. The results show promise for the thermal management of this two-dimensional heterostructure in an actively tunable manner.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Thermal transport of graphene-C 3 B superlattices and van der Waals heterostructures: A molecular dynamics study

Guangzheng Zhang,Shilin Dong,Xinyu Wang,Gongming Xin

DOI: https://doi.org/10.1088/1361-6528/ad06d0

IF: 3.5

2023-10-26

Nanotechnology

Abstract:Two-dimensional (2D) materials have attracted more and more attention due to their excellent properties. In this work, we systematically explore the heat transport properties of Graphene-C 3 B (GRA-C 3 B) superlattices and van der Waals (vdW) heterostructures using molecular dynamics method. The effects of interface types and heat flow directions on the in-plane interfacial thermal resistance (ITR ip ) are analyzed. Obvious thermal rectification is detected in the more energy stable interface, GRA zigzag-C 3 B zigzag (ZZ) interface, which also has the minimum value of ITR ip . The dependence of the superlattices thermal conductivity (k) of the ZZ interface on the period length (l p ) is investigated. The results show that when the l p is 3.5 nm, the k reaches a minimum value of 35.52 W m −1 K −1 , indicating a transition stage from coherent phonon transport to incoherent phonon transport. Afterwards, the effects of system size, temperature, coupling strength and vacancy defect on the out-of-plane interfacial thermal resistance (ITR op ) are evaluated. With the increase of temperature, coupling strength and vacancy defect, ITR op are found to reduce effectively due to the enhanced Umklapp phonon scattering and increased probability of energy transfer. Phonon density of states and phonon participation ratio is evaluated to reveal phonon behavior during heat transport. This work is expected to provide essential guidance for the thermal management of nanoelectronics based on 2D monolayer GRA and C 3 B.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Thermal Transport in Planar Sp2-Hybridized Carbon Allotropes: A Comparative Study of Biphenylene Network, Pentaheptite and Graphene

Penghua Ying,Ting Liang,Yao Du,Jin Zhang,Xiaoliang Zeng,Zheng Zhong

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2021.122060

IF: 5.2

2021-01-01

International Journal of Heat and Mass Transfer

Abstract:The biphenylene network with periodically arranged four-, six-, and eightmembered rings has been successfully synthesized in very recent experiments. This novel two-dimensional (2D) carbon allotrope has potentials in applications of lithium storage and carbon-based circuitry. Understanding the thermal transport properties of biphenylene network is of critical importance for the performance and reliability of its practical applications. To this end, the thermal transport in biphenylene network is comprehensively investigated in this paper with the aid of molecular dynamics simulations together with first-principles calculations. For the sake of comparison, the thermal conductivities of other 2D sp2-hybridized carbon allotropes including graphene and pentaheptite are also investigated using the same method. It is found that the thermal conductivities of biphenylene network and pentaheptite are, respectively, only about one-thirteenth and one-eighth of graphene. Through the analysis of phonon property, mechanical property and electron density distribution, it is demonstrated that the great reduction in the thermal conductivity of biphenylene network and pentaheptite arises from the decline in their structural symmetry, which leads to the decrease of phonon group velocity and the reduction of phonon mean free path.
Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces

Zequn Wang,Meng An,Kunliang Zhang,Dongsheng Chen,Xuhui Sun,Xin Wang,Yuejin Yuan,Junwen Shi,Jianchun Wu

DOI: https://doi.org/10.1016/j.surfin.2022.102603

IF: 6.2

2023-01-01

Surfaces and Interfaces

Abstract:Developing semiconducting materials with suitable band gap has attracted increasing attention for next-generation intelligent electronic devices. Recently, the newly synthesized monolayer carbon boron (C3B) material exhibits outstanding electronic properties and processes with indirect bandgap, which is considered as the promising alternatives of graphene. The heat conduction capability plays a critical role in the performance of C3B-based electronic devices and thermocatalysis applications. Herein, the thermal conductivity of monolayer C3B and graphene, and interfacial phonon transport across heterointerface are systematically investigated utilizing non-equilibrium molecular dynamics simulation. Compared with graphene, the reduced thermal conductivity of C3B sheet mainly stems from the decreased phonon group velocity and phonon relaxation time when the periodical boron atoms are introduced in C3B sheet based on the lattice dynamics and spectral phonon transmission analysis. Meanwhile, the influences of temperature and strain on the thermal conductivity of C3B are also discussed. Moreover, the thermal transport across the graphene|C3B heterointerface with different temperatures is analyzed. Interestingly, it is found that the larger interfacial thermal conductance of zigzag heterointerfaces mainly originates from the stronger phonon-phonon coupling between the out-of-plane vibrational modes of C3B and graphene. Our work would provide more insights for fundamental understanding the thermal transport properties of two-dimensional materials and be beneficial to the design of thermal management and thermoelectric materials.
Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Jie Zhang,Xuelin Yang,Jianpeng Cheng,Yuxia Feng,Panfeng Ji,Anqi Hu,F. R. Xu,Ning Tang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1063/1.4982597

IF: 4

2017-01-01

Applied Physics Letters

Abstract:We have investigated the structural and transport properties of InAlGaN/AlN/GaN heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low temperature after the growth interruption, the surface morphology and interface quality have been significantly improved. Electron mobilities of 1620 cm(2)/Vs at room temperature and 8260 cm(2)/Vs at 77K are achieved while delivering a high electron sheet density of about 2.0 x 10(13) cm(-2), resulting in an extremely low sheet resistance of 186 Omega/square at room temperature and 37 Omega/square at 77 K. The experimental results evidence that it is the high interface quality that contributes to the improvement of electron transport properties. Our results provide an effective approach to obtain high quality InAlGaN/GaN heterostructures. Published by AIP Publishing.
Heat transfer enhancement of N-Ga-Al semiconductors heterogeneous interfaces

Wenzhu Luo,Ershuai Yin,Lei Wang,Wenlei Lian,Neng Wang,Qiang Li

2024-10-11

Abstract:Heat transfer enhancement of N-Ga-Al semiconductor heterostructure interfaces is critical for the heat dissipation in GaN-based electronic devices, while the effect of the AlxGa(1-x)N transition layer component concentration and thickness on the heat transfer mechanism at the GaN-AlN interface is unclear. In this paper, using molecular dynamics simulations based on machine learning potentials, the interfacial thermal conductance (ITC) between GaN-AlxGa(1-x)N, AlN-AlxGa(1-x)N and GaN-AlxGa(1-x)N-AlN heterostructure interfaces are calculated for different transition layer thicknesses with different concentrations of Al fractions, and the reasons for the change of ITC and its heat transfer mechanism were explained by the phonon density of states and the spectral heat current. GaN-AlN heterostructure ITC at 300 K is calculated to be 557 MW/(m2K), and the ITCs of GaN-Al0.5Ga0.5N and AlN-Al0.5Ga0.5N are improved by 128% and 229% compared to GaN-AlN, whereas the ITCs of GaN-Al0.7Ga0.3N-AlN containing a 0.5 nm transition layer improved by 27.6%. This is because elemental doping enhances phonon scattering near the interface thereby promoting phonon energy redistribution, but the bulk thermal resistance of the AlxGa(1-x)N layer also increases rapidly with increasing doping ratio, and ITC is affected by a combination of these two factors. This work aims to understand the mechanism of transition layer component concentration and thickness on the heat transfer at the GaN-AlN contact interface, which provides a useful guide for better thermal design of the GaN-AlN heterostructure interface.

Materials Science,Applied Physics
Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

D. J. Chen,Y. Q. Tao,C. Chen,R. Zhang,Y. D. Zheng,M. J. Wang,B. Shen,Z. H. Li,G. Jiao,T. S. Chen

DOI: https://doi.org/10.1063/1.2408657

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The transport properties of the two dimensional electron gas (2DEG) in AlGaN∕GaN heterostructures with AlN, Si3N4, and SiO2 passivation layers and without passivation layer were investigated using Hall effect measurements over a temperature range of 30–550°C. Compared to the Si3N4 and SiO2 passivation dielectrics, the AlN film led to an obvious increase not only in carrier concentration but also in mobility of the 2DEG. The variation of the carrier concentration with temperature in the AlN passivated sample is also smaller in comparison with the Si3N4 passivated sample. These indicate that the AlN film is a promising passivation dielectric. In addition, the results from Hall and high-resolution x-ray diffraction measurements show that the change of strain after passivation contributes only in a relatively small proportion to the variation of the carrier concentration in AlGaN∕GaN heterostructures.
Superior Thermal Conductivity of Graphene Film/Cu-Zr Alloy Composites for Thermal Management Applications

Guo Chang,Luhua Wang,Yongjian Zhang,Xiang Li,Kaiyun Chen,Dongxiao Kan,Wei Zhang,Shuang Zhang,Longlong Dong,Liang Li,Xue Bai,Hailong Zhang,Wangtu Huo

DOI: https://doi.org/10.1021/acsami.2c18101

2022-12-14

Abstract:ACS Appl Mater Interfaces . 2022 Dec 12. doi: 10.1021/acsami.2c18101. Online ahead of print. NO

materials science, multidisciplinary,nanoscience & nanotechnology
Enhanced Thermal Transport Properties of Graphene/SiC Heterostructures on Nuclear Reactor Cladding Material: A Molecular Dynamics Insight

Lei Wu,Xiangyang Sun,Feng Gong,Junyi Luo,Chunyu Yin,Zhipeng Sun,Rui Xiao

DOI: https://doi.org/10.3390/nano12060894

IF: 5.3

2022-03-08

Nanomaterials

Abstract:Owing to the excellent thermal properties of graphene, silicon carbide (SiC) combined with graphene is expected to obtain more outstanding thermal performance and structural stability at high temperatures. Herein, the thermal conductivity of graphene/SiC heterostructures (GS-Hs) with different structures and atomic orientations was calculated through non-equilibrium molecular dynamics (NEMD) simulations. The temperature dependence and size effect on the thermal transport properties of GS-Hs were systematically investigated and discussed. The continuous addition of graphene layers did not always have a positive effect. The thermal transport performance of GS-Hs approached the intrinsic thermal conductivity of SiC when the interaction gradually decreased with the distance between SiC and graphene. Studies on temperature and size dependence show opposite trends. The enhancement effect of graphene was limited at small distances. The thermal conductivity of GS-Hs had a negative correlation with temperature and increased with the system size. Meanwhile, the thermal conductivity of GS-Hs was predicted to be 156.25 (W·m−1·K−1) at the macroscopic scale via extrapolation. The model established in this paper is also applicable to other material simulation processes, as long as the corresponding parameters and potential functions are available. This study will provide inspiration for the optimized design and preparation of highly efficient cladding materials in nuclear reactors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Enhancing thermal transport across diamond/graphene heterostructure interface

Yiling Liu,Lin Qiu,Jinlong Liu,Yanhui Feng

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2023.124123

IF: 5.2

2023-03-27

International Journal of Heat and Mass Transfer

Abstract:The thermal properties of two-dimensional materials and their heterostructure are critical for efficient heat dissipation in nano-devices. A good example is graphene which exhibits excellent in-plane thermal transport properties. However, the substantial interfacial thermal resistance between graphene and the substrate greatly hinders its practical application. Diamond is a good choice as a substrate to reduce out-of-plane phonon scattering when graphene is contacted with the substrate because of their high structural similarity. Based on non-equilibrium molecular dynamics simulations, the effects of graphene layer count and the temperature on the thermal conductance of diamond/graphene heterostructure are investigated. The results show that the interfacial thermal conductance of diamond/single-layer graphene heterostructure is at least double that of diamond/multi-layer graphene heterostructure. Moreover, high temperature is also conducive to thermal transport for diamond/graphene heterostructure. Due to the anisotropy of graphene, the in-plane and out-of-plane phonon density of state were analyzed. The trend of overlap energy of out-of-plane phonon density of state is consistent with that of the interfacial thermal conductance, which suggests that out-of-plane phonon has a greater effect on heat transport at the interface. The increasing temperature excites more high-frequency phonons, and thus, promotes the phonon coupling of diamond and graphene. This well explains the increases in interfacial thermal conductance at a higher temperature.

engineering, mechanical,thermodynamics,mechanics
Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Ruiyang Li,Kamal Hussain,Michael E. Liao,Kenny Huynh,Md Shafkat Bin Hoque,Spencer Wyant,Yee Rui Koh,Zhihao Xu,Yekan Wang,Dorian P. Luccioni,Zhe Cheng,Jingjing Shi,Eungkyu Lee,Samuel Graham,Asegun Henry,Patrick E. Hopkins,Mark S. Goorsky,M.Asif Khan,Tengfei Luo

DOI: https://doi.org/10.1021/acsami.3c16905

IF: 9.5

2024-02-06

ACS Applied Materials & Interfaces

Abstract:Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to...

materials science, multidisciplinary,nanoscience & nanotechnology

Thermal Transport of AlN/Graphene/3C-SiC Typical Heterostructures with Different Crystallinities of Graphene

Structure-mediated thermal transport of monolayer graphene allotropes nanoribbons

Thermal transport mechanism of AlN/SiG/3C-SiC typical heterostructures

Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Thermal transport at 6H-SiC/graphene buffer layer/GaN heterogeneous interface

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner

Thermal transport of graphene-C 3 B superlattices and van der Waals heterostructures: A molecular dynamics study

Thermal Transport in Planar Sp2-Hybridized Carbon Allotropes: A Comparative Study of Biphenylene Network, Pentaheptite and Graphene

Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Heat transfer enhancement of N-Ga-Al semiconductors heterogeneous interfaces

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Superior Thermal Conductivity of Graphene Film/Cu-Zr Alloy Composites for Thermal Management Applications

Enhanced Thermal Transport Properties of Graphene/SiC Heterostructures on Nuclear Reactor Cladding Material: A Molecular Dynamics Insight

Enhancing thermal transport across diamond/graphene heterostructure interface

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers