Abstract:Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility approximate to 2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor approximate to 42 mu W cm-1 K-2 and a ZT approximate to 0.7 at 300 K. The average ZT of it reaches approximate to 0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference approximate to 42 K with the hot side at 300 K, approximate to 65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3. This work enhances the near-room temperature performance of p-type PbSe crystals by enhancing carrier mobility via lattice plainification, leading to promising power generation and thermoelectric cooling performance in p-type Pb0.996Cu0.0004Se-based devices. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and will motivate more research on developing new thermoelectric coolers. image

Balanced High Thermoelectric Performance in n-Type and p-Type CuAgSe Realized through Vacancy Manipulation

Thermoelectric Properties of Strained -Cu<sub>2</sub>Se

Thermoelectric Optimization of n-Type AgBiSe 2 via Se Vacancy Control and Transition-Metal Doping

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

High-Density Arrangement of Nanoscale Regions with Tellurium Interstitial Atoms and Silver/Copper Vacancies in AgCuTe Thermoelectric Materials

Anomalous Transport and Thermoelectric Performances of CuAgSe Compounds

Realizing Ultrahigh Thermoelectric Performance in n‐Type PbSe Through Lattice Planification and Introducing Liquid‐Like Cu Ions

Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies

Tuning Ag content to achieve high thermoelectric properties of Bi-doped p-type Cu3SbSe4-based materials

Achieving High Thermoelectric Performance in ZnSe-Doped CuGaTe2 by Optimizing the Carrier Concentration and Reducing Thermal Conductivity

High thermoelectric properties of Cu2Te Ag2Te composite with Fe addition and non-stoichiometric Te

Cu vacancy engineering of cage-compound BaCu2Se2: Realization of temperature-dependent hole concentration for high average thermoelectric figure-of-merit

High‐Performance GeSe‐Based Thermoelectrics via Cu‐Doping

Enhanced thermoelectric properties of Cu-Se system via bond-structure adjustment by Ag-doping

Simultaneously optimized thermoelectric performance of n-type Cu2Se alloyed Bi2Te3

Enhanced Thermoelectric Performance in n-type Ag2Se Near Room Temperatures

High Thermoelectric Performance in P‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering

Dual Alloying Enables High Thermoelectric Performance in AgSbTe2 by Manipulating Carrier Transport Behavior

Weak Electron–Phonon Coupling and Enhanced Thermoelectric Performance in N‐type PbTe–Cu2Se Via Dynamic Phase Conversion