X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Junhyung Jeong,Kyujun Cho,Honggu Ji,Woojin Chang,Jongmin Lee,Byoung‐gue Min,Dongmin Kang

DOI: https://doi.org/10.1049/ell2.13221

2024-05-29

Electronics Letters

Abstract:This paper introduces a novel X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. A novel quasi Class‐F output matching circuit is proposed to improve efficiency, with DynaFET modelling for GaN HEMT employed for HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 μm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth. This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 μm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth.

engineering, electrical & electronic