Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Visualizing topological edge states of single and double bilayer Bi supported on multibilayer Bi(111) films

Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer.

Edge Engineering of A Topological Bi(111) Bilayer

Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Abstract Submitted for the MAR16 Meeting of The American Physical Society One-dimensional edge states in Bi(111) bilayer grown on Sb2Te3

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Tunable topological edge states in black phosphorus-like Bi(110)

Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies

Electron-phonon interactions at the topological edge states in single bilayer Bi(111)

Stability of topological properties of bismuth (111) bilayer

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Topological States Modulation of Bi and Sb Thin Films by Atomic Adsorption

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films