On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

A. L. Zakgeim,S. A. Karandashev,A. A. Klimov,R. E. Kunkov,T. S. Lukhmyrina,B. A. Matveev,M. A. Remennyi,A. A. Usikova,A. E. Chernyakov
DOI: https://doi.org/10.1134/s1063782623030193
IF: 0.66
2024-03-16
Semiconductors
Abstract:Three main reasons for a temperature increase in activated p -InAsSbP/ n -InAs/ n -InAsSbP and p -InAsSbP/ n -InAsSb/ n -InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.
physics, condensed matter
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