Abstract:Lumen output and efficacy of high-power LEDs have crossed 200 lm/W, and the application of LEDs is growing beyond illumination into other areas like horticulture, UV-C LEDs for disinfection, and health-centric lighting where controlling parameters like the shift in wavelength, Color Rendering Index (CRI), etc. are important. Whether delivering high light output or controlled spectral designs for specific applications, thermal management of LEDs to lower the junction temperature is vital as it directly impacts the intended performance. The packaging substrate on which the LED is mounted plays a critical role in controlling the junction temperature. In this study, a thin film amorphous silicon (a-Si) dielectric coating on an aluminum (a-Si/Al) substrate followed by a 300 nm thick copper trace pattern for LED attachment using magnetron sputtering Physical Vapor Deposition (PVD) process has been carried out. Three other Packaging material substrates of FR4, Metal Core PCB (MCPCB), and Silicon using undoped Silicon wafer were fabricated, and a Nano-ceramic on Aluminum substrate was also procured for comparative Transient Thermal analysis study using Luxeon-Rebel Cool White LED. The Thermal resistance from the LED junction to the bottom of the a-Si/Al packaging substrate attached to the liquid temperature-controlled heat sink measured at 700 mA driving current, as per industry standard JEDEC 51–14 method, was 8.77 °C/W. Compared to this Thermal resistance value of a-Si/Al substrate, the thermal resistance of Silicon substrate, Nanoceramic on Aluminum, MCPCB, and FR4-based packaging substrates were 3.19%, 55.53%, 180.73%, and 405% higher with the corresponding Thermal resistance values of 9.05 °C/W, 13.64 °C/W, 24.62 °C/W and 44.34 °C/W respectively. Light Lumen output measurements for the substrates with the lowest and the highest thermal resistance, namely the (a-Si/Al) and FR4 substrates were also measured and the light output efficacy of the (a-Si/Al) substrate was 9.46% higher than the FR4 substrate. Also, the light output drop of the (a-Si/Al) substrate was only 1.66% compared against 10.66% for the FR4 substrate after 30 min of testing under no heatsink attachment conditions. Thus, the a-Si thin film-coated Aluminum as the LED packaging substrate can help lower the junction temperature with low thermal resistance and improve the color quality, efficacy, lumen depreciation, and reliability.

Thermal Conductivity of Hybrid SiC/Si Substrates for the Growth of LED Heterostructures

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Thermal Conductivity and Interfacial Thermal Resistance in the Heterostructure of Silicon/amorphous Silicon Dioxide: the Strain and Temperature Effect.

Silicon Based Light Emitters for On-Chip Optical Interconnects

A Comparative Thermal and Lumen Performance Study of Thin-film Amorphous Silicon Dielectric Coating on Aluminum as an LED Packaging Substrate

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

Three-Sensor 3Ω-2Ω Method for the Simultaneous Measurement of Thermal Conductivity and Thermal Boundary Resistance in Film-on-Substrate Heterostructures

Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes

Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon