Abstract:Through comparison between the microstructures, crystallization temperatures, and biaxial stresses of hafnium zirconium oxide thin films processed with and without top TaN electrode layers, the origin of the clamping effect in HfO2‐based ferroelectrics is investigated. It is shown that local inhibition in out‐of‐plane expansion during crystallization stabilizes the ferroelectric orthorhombic phase, which drives an increase in film tensile biaxial stress. The presence of the top electrode on hafnium oxide‐based thin films during processing has been shown to drive an increase in the amount of metastable ferroelectric orthorhombic phase and polarization performance. This "Clamping Effect," also referred to as the Capping or Confinement Effect, is attributed to the mechanical stress and confinement from the top electrode layer. However, other contributions to orthorhombic phase stabilization have been experimentally reported, which may also be affected by the presence of a top electrode. In this study, it is shown that the presence of the top electrode during thermal processing results in larger tensile biaxial stress magnitudes and concomitant increases in ferroelectric phase fraction and polarization response, whereas film chemistry, microstructure, and crystallization temperature are not affected. Through etching experiments and measurement of stress evolution for each processing step, it is shown that the top electrode locally inhibits out‐of‐plane expansion in the HZO during crystallization, which prevents equilibrium monoclinic phase formation and stabilizes the orthorhombic phase. This study provides a mechanistic understanding of the clamping effect and orthorhombic phase formation in ferroelectric hafnium oxide‐based thin films, which informs the future design of these materials to maximize ferroelectric phase purity and corresponding polarization behavior.

Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Effects of Electrodes on Antiferroelectricity and Fatigue Endurance of Hf0.2Zr0.8O2 Thin Films

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf 0.5 Zr 0.5 O 2